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Synchronization in the Uncoupled Neuron System
ZHANG Ji-Qian, HUANG Shou-Fang, PANG Si-Tao, WANG Mao-Sheng, GAO Sheng
Chin. Phys. Lett. 2015, 32 (12):
120502
.
DOI: 10.1088/0256-307X/32/12/120502
Using the model of Hindmarsh–Rose neurons, we study the synchronous behavior of the firing patterns in an uncoupled cell system. In this work, the membrane current Iext is selected as a controllable parameter, whose initial values for all N cells are set to be near one of the bifurcation points randomly. It is found that the system will show un-synchronous state when the external stimuli is absent, otherwise, full synchrony will appear, even though without any coupling connection among these N neurons, indicating the occurrence of uncoupled synchrony. Moreover, similar behavior could also be observed when these neurons are set to be near other bifurcation points. The synchronous error is calculated for discussing this uncoupled synchrony behavior. Finally, we find that such synchrony may have some inherent relevance with the decrease of phase difference between different cells. Our results suggest that biological neuron systems may achieve an effective response to external feeble stimulus by the mode of uncoupled synchrony instead of only by the coupled scheme.
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A Model-Independent Discussion of Quark Number Density and Quark Condensate at Zero Temperature and Finite Quark Chemical Potential
XU Shu-Sheng, JIANG Yu, SHI Chao, CUI Zhu-Fang, ZONG Hong-Shi
Chin. Phys. Lett. 2015, 32 (12):
121101
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DOI: 10.1088/0256-307X/32/12/121101
Generally speaking, the quark propagator is dependent on the quark chemical potential in the dense quantum chromodynamics (QCD). By means of the generating functional method, we prove that the quark propagator actually depends on p4+iμ from the first principle of QCD. The relation between quark number density and quark condensate is discussed by analyzing their singularities. It is concluded that the quark number density has some singularities at certain μ when T=0, and the variations of the quark number density as well as the quark condensate are located at the same point. In other words, at a certain μ the quark number density turns to nonzero, while the quark condensate begins to decrease from its vacuum value.
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Efficient Diode-End-Pumped Actively Q-Switched Nd:YLF/SrWO4 Raman Laser
LIU Yang, LIU Zhao-Jun, CONG Zhen-Hua, MEN Shao-Jie, XIA Jin-Bao, RAO Han, ZHANG Sa-Sa
Chin. Phys. Lett. 2015, 32 (12):
124201
.
DOI: 10.1088/0256-307X/32/12/124201
An efficient diode-end-pumped actively Q-switched Nd:YLF/SrWO4 Raman laser is demonstrated. The fundamental wave is 1047.0 nm and the corresponding first-Stocks wave is 1158.7 nm. With a pumping power of 10.5 W, the average output power of 2.2 W at 1158.7 nm is obtained, with the corresponding optical conversion efficiency of 20.9%. At a repetition rate of 6 kHz, the pulse width of the Raman laser is 8.7 ns and the peak power is calculated to be 42.1 kW. The beam quality factors M2 in horizontal and vertical directions are 1.3 and 1.5, respectively.
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Second-Order Correlation Function for Asymmetric-to-Symmetric Transitions due to Spectrally Indistinguishable Biexciton Cascade Emission
WU Xue-Fei, DOU Xiu-Ming, DING Kun, ZHOU Peng-Yu, NI Hai-Qiao, NIU Zhi-Chuan, ZHU Hai-Jun, JIANG De-Sheng, ZHAO Cui-Lan, SUN Bao-Quan
Chin. Phys. Lett. 2015, 32 (12):
124204
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DOI: 10.1088/0256-307X/32/12/124204
We report the observed photon bunching statistics of biexciton cascade emission at zero time delay in single quantum dots by second-order correlation function g(2)(τ) measurements under continuous wave excitation. It is found that the bunching phenomenon is independent of the biexciton binding energy when it varies from 0.59 meV to nearly zero. The photon bunching takes place when the exciton photon is not spectrally distinguishable from the biexciton photon, and either of them can trigger the 'start' in a Hanbury–Brown and Twiss setup. However, if the exciton energy is spectrally distinguishable from the biexciton, the photon statistics will become asymmetric and a cross-bunching lineshape can be obtained. The theoretical calculations based on a model of three-level rate-equation analysis are consistent with the result of g(2)(τ) correlation function measurements.
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Comparison of Three Methods in Extracting Coherent Modes from a Doppler Backscatter System
ZHANG Xiao-Hui, LIU A-Di, ZHOU CHU, HU Jian-Qiang, WANG Ming-Yuan, YU Chang-Xuan, LIU Wan-Dong, LI Hong, LAN Tao, XIE Jin-Lin
Chin. Phys. Lett. 2015, 32 (12):
125201
.
DOI: 10.1088/0256-307X/32/12/125201
We compare three different methods to extract coherent modes from Doppler backscattering (DBS), which are center of gravity (COG) of the complex amplitude spectrum, spectrum of DBS phase derivative (phase derivative method), and phase spectrum, respectively. These three methods are all feasible to extract coherent modes, for example, geodesic acoustic mode oscillation. However, there are still differences between dealing with high frequency modes (several hundred kHz) and low frequency modes (several kHz) hiding in DBS signal. There is a significant amount of power at low frequencies in the phase spectrum, which can be removed by using the phase derivative method and COG. High frequency modes are clearer by using the COG and the phase derivative method than the phase spectrum. The spectrum of DBS amplitude does not show the coherent modes detected by using COG, phase derivative method and phase spectrum. When two Doppler shifted peaks exist, coherent modes and their harmonics appear in the spectrum of DBS amplitude, which are introduced by the DBS phase.
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Absolute and Convective Instabilities of Two-Plasmon Decay in an Inhomogeneous Magnetized Plasma
SUN Xin-Feng, JIANG Zhong-He, XU Tao, HU Xi-Wei, ZHUANG Ge, WANG Lu, WANG Xiao-Hong
Chin. Phys. Lett. 2015, 32 (12):
125202
.
DOI: 10.1088/0256-307X/32/12/125202
Three-wave resonant parametric decay instability of extraordinary wave decay into two upper hybrid waves in an inhomogeneous plasma is studied theoretically. Analytical expressions of the local absolute growth rate, convective amplification factor and threshold intensity are obtained. The calculated results show that the effects of magnetic field and ky (ky is the component of the wavenumber of upper hybrid wave perpendicular to pump wave k0) on the growth rate, amplification factor and threshold intensity are extremely dependent on their strength. The absolute growth rate and convective amplification factor increase with the plasma density while the threshold decreases. Moreover, the expression indicates that the inhomogeneity scale length of density and linear damping will reduce the convective amplification factor.
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Analysis of Low-Frequency Vibrational Modes and Particle Rearrangements in Marginally Jammed Amorphous Solid under Quasi-Static Shear
DONG Yuan-Xiang, ZHANG Guo-Hua, SUN Qi-Cheng, ZHAO Xue-Dan, NIU Xiao-Na
Chin. Phys. Lett. 2015, 32 (12):
126201
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DOI: 10.1088/0256-307X/32/12/126201
We present the numerical simulation results of a model granular assembly formed by spherical particles with Hertzian interaction subjected to a simple shear in the athermal quasi-static limit. The stress-strain curve is shown to separate into smooth, elastic branches followed by a subsequent plastic event. Mode analysis shows that the lowest-frequency vibrational mode is more localized, and eigenvalues and participation ratios of low-frequency modes exhibit similar power-law behavior as the system approaches plastic instability, indicating that the nature of plastic events in the granular system is also a saddle node bifurcation. The analysis of projection and spatial structure shows that over 75% contributions to the non-affine displacement field at a plastic instability come from the lowest-frequency mode, and the lowest-frequency mode is strongly spatially correlated with local plastic rearrangements, inferring that the lowest-frequency mode could be used as a predictor for future plastic rearrangements in the disordered system jammed marginally.
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Raman Scattering Modification Induced by Structural Change in Alumina Polymorphs
ZHANG Jian, LI Hai-Tao, GUO Jun-Hong, HU Fang-Ren
Chin. Phys. Lett. 2015, 32 (12):
126801
.
DOI: 10.1088/0256-307X/32/12/126801
The calculated Raman spectra disclose that alumina polymorphs of nordstrandite, gibbsite, diaspore, boehmite, bayerite and α-Al2O3 display different phonon behaviors, which can be attributed to their internal crystal structure changes. The strongest Raman peaks of nordstrandite, gibbsite, diaspore, boehmite, bayerite and α-Al2O3 are located at 214.2 cm?1, 3314.4 cm?1, 2298.6 cm?1, 747.7 cm?1, 3484.6 cm?1 and 529.2 cm?1, respectively. The characterizations in Raman spectra of those polymorphs are obviously different, which can be used in fingerprints to identify the alumina polymorphs structure.
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Fabrication and Characterization of 1700 V 4H-SiC Vertical Double-Implanted Metal-Oxide-Semiconductor Field-Effect Transistors
SHEN Hua-Jun, TANG Ya-Chao, PENG Zhao-Yang, DENG Xiao-Chuan, BAI Yun, WANG Yi-Yu, LI Cheng-Zhan, LIU Ke-An, LIU Xin-Yu
Chin. Phys. Lett. 2015, 32 (12):
127101
.
DOI: 10.1088/0256-307X/32/12/127101
The fabrication and characterization of 1700 V 7 A 4H-SiC vertical double-implanted metal-oxide-semiconductor field-effect transistors (VDMOSFETs) are reported. The drift layer is 17 μm in thickness with 5×1015 cm?3 n-type doping, and the channel length is 1 μm. The MOSFETs show a peak mobility of 17 cm2/V?s and a typical threshold voltage of 3 V. The active area of 0.028 cm2 delivers a forward drain current of 7 A at VGS=22 V and VDS=15 V. The specific on-resistance (Ron,sp) is 18 mΩ?cm2 at VGS=22 V and the blocking voltage is 1975 V (IDS<100 nA) at VGS=0 V.
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Observation of a Current Plateau in the Transfer Characteristics of InGaN/AlGaN/AlN/GaN Heterojunction Field Effect Transistors
YAN Jun-Da, WANG Quan, WANG Xiao-Liang, XIAO Hong-Ling, JIANG Li-Juan, YIN Hai-Bo, FENG Chun, WANG Cui-Mei, QU Shen-Qi, GONG Jia-Min, ZHANG Bo, LI Bai-Quan, WANG Zhan-Guo, HOU Xun
Chin. Phys. Lett. 2015, 32 (12):
127301
.
DOI: 10.1088/0256-307X/32/12/127301
Direct?current transfer characteristics of (InGaN)/AlGaN/AlN/GaN heterojunction field effect transistors (HFETs) are presented. A drain current plateau (IDS=32.0 mA/mm) for VGS swept from +0.7 V to -0.6 V is present in the transfer characteristics of InGaN/AlGaN/AlN/GaN HFETs. The theoretical calculation shows the coexistence of two-dimensional electron gas (2DEG) and two-dimensional hole gas (2DHG) in InGaN/AlGaN/AlN/GaN heterostructures, and the screening effect of 2DHG to the 2DEG in the conduction channel can explain this current plateau. Moreover, the current plateau shows the time-dependent behavior when IDS–VGS scans repeated are conducted. The obtained insight provides indication for the design in the fabrication of GaN-based super HFETs.
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High Thermoelectric Figure of Merit of Ag8SnS6 Component Prepared by Electrodeposition Technique
TAHER Ghrib, AMAL Lafy Al-Otaibi, MUNIRAH Abdullah Almessiere, IBTISSEM Ben Assaker, RADHOUANE Chtourou
Chin. Phys. Lett. 2015, 32 (12):
127402
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DOI: 10.1088/0256-307X/32/12/127402
A new thermoelectric material Ag8SnS6, with ultra?low thermal conductivity in thin film shape, is prepared on indium tin oxide coated glass (ITO) substrates using a chemical process via the electrodeposition technique. The structural, thermal and electrical properties are studied and presented in detail, which demonstrate that the material is of semiconductor type, orthorhombic structure, with a band gap in the order of 1.56 eV and a free carrier concentration of 1.46×1017 cm?3. The thermal conductivity, thermal diffusivity, thermal conduction mode, Seebeck coefficient and electrical conductivity are determined using the photo-thermal deflection technique combined with the Boltzmann transport theory and Cahill's model, showing that the Ag8SnS6 material has a low thermal conductivity of 3.8 Wm?1K?1, high electrical conductivity of 2.4×105 Sm?1, Seebeck coefficient of -180 μVK?1 and a power factor of 6.9 mWK?2m?1, implying that it is more efficient than those obtained in recently experimental investigations for thermoelectric devices.
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Doping Evolution of the Superconducting Gap Structure in Heavily Hole-Doped Ba1?xKxFe2As2: a Heat Transport Study
HONG Xiao-Chen, WANG Ai-Feng, ZHANG Zhen, PAN Jian, HE Lan-Po, LUO Xi-Gang, CHEN Xian-Hui, LI Shi-Yan
Chin. Phys. Lett. 2015, 32 (12):
127403
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DOI: 10.1088/0256-307X/32/12/127403
We perform systematic thermal conductivity measurements on heavily hole-doped Ba1?xKxFe2As2 single crystals with 0.747≤x ≤0.974. At x=0.747, the κ0/T is negligible, indicating a nodeless superconducting gap. A small residual linear term κ0/T (≈0.035 mW?K?2cm?1) appears at x=0.826, and it increases slowly up to x=0.974, followed by a substantial increase of more than 20 times to the pure KFe2As2 (x=1.0). This doping dependence of κ0/T clearly shows that the nodal gap appears near x=0.8, possibly associated with the change of Fermi surface topology. The small values of κ0/T from x=0.826 to 0.974 are consistent with the ?-shaped nodal s-wave gap recently revealed by angle-resolved photoemission spectroscopy experiments at x=0.9. Furthermore, the substantial increase of κ0/T from x=0.974 to 1.0 is inconsistent with a symmetry-imposed d-wave gap in KFe2As2, and a possible nodal gap structure in KFe2As2 is discussed.
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Preparation of Highly Textured Bi and MnBi Films by the Pulsed Laser Deposition Method
ZHOU Dong, ZHANG Yin-Feng, MA Xiao-Bai, LIU Shun-Quan, HAN Jing-Zhi, ZHU Ming-Gang, WANG Chang-Sheng, YANG Jin-Bo
Chin. Phys. Lett. 2015, 32 (12):
127502
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DOI: 10.1088/0256-307X/32/12/127502
Textured Bi and MnBi/Bi thin films are prepared by the pulsed laser deposition method. The highly c-axis textured MnBi films are obtained by annealing the bilayer consisting of textured Bi and Mn films. The coercivities of the MnBi/Bi film are 1.5 T and 2.35 T at room temperature and at 373 K, respectively, showing a positive temperature coefficient. Microstructural investigations show that the textured MnBi film results from the orientated growth induced by the textured Bi under-layer.
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Nuclear-Magnetic-Resonance Properties of the Staircase Kagomé Antiferromagnet $PbCu_3TeO_7$
DAI Jia, WANG Peng-Shuai, SUN Shan-Shan, PANG Fei, ZHANG Jin-Shan, DONG Xiao-Li, YUE Gen, JIN Kui, CONG Jun-Zhuang, Sun Yang, YU Wei-Qiang
Chin. Phys. Lett. 2015, 32 (12):
127503
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DOI: 10.1088/0256-307X/32/12/127503
We report the first nuclear magnetic resonance (NMR) study on single crystals of staircase Kagomé antiferromagnet PbCu3TeO7 (TN1∼36 K). A Curie constant Θ ∼−140 K is obtained by a Curie–Weiss fit to the high-temperature Knight shift of 125Te. The hyperfine coupling constant is estimated to be 125Ahf=−67 kOe/μB, and a strong interlayer coupling among staircase Kagomé planes is suggested with such a large hyperfine coupling, according to the lattice structure. The 63, 65Cu NMR spectra are found by the zero-field (ZF) NMR at T=2 K, and the internal hyperfine fields are estimated to be 10.3 T and 9.6 T, for Cu(1) and Cu(2) sites, respectively, in the lattice. A second type of ZF NMR signal with a large rf enhancement is also seen after field-cycling through a high magnetic field.
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Ag3PO4 Microcrystals Synthesized by Room-Temperature Solid State Reaction: Enhanced Photocatalytic Activity and Photoelectronchemistry Performance
HAO Chen-Chun, XU Jie, SHI Hong-Long, FU Jun-Li, ZOU Bin, MENG Shan, WANG Wen-Zhong, JIA Ying
Chin. Phys. Lett. 2015, 32 (12):
128101
.
DOI: 10.1088/0256-307X/32/12/128101
Ag3PO4 microcrystals with highly enhanced visible light photocatalytic activity are prepared by a facile and simple solid state reaction at room temperature. The composition, morphology and optical properties of the as-prepared Ag3PO4 microcrystals are characterized by x-ray diffraction, scanning electron microscopy and UV-vis diffuse reflectance spectra. The photocatalytic properties of Ag3PO4 are investigated by the degradation of both methylene blue and methyl orange dyes under visible light irradiation. The as-prepared Ag3PO4 microcrystals possess high photocatalytic oxygen production with the rate of 673 μmolh?1g?1. Moreover, the as-prepared Ag3PO4 microcrystals show an enhanced photoelectrochemistry performance under irradiation of visible light.
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The Morphology of Patterning with Pseudoplastic Metal Nanoparticle Fluids during Heat Treatment
WANG Wen, SU Yu-Feng, LIU Chao-Ran, LI Dong-Xue, WANG Pan, DUAN Zhi-Yong
Chin. Phys. Lett. 2015, 32 (12):
128102
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DOI: 10.1088/0256-307X/32/12/128102
A pseudoplastic metal nanoparticle fluid (PMNF) is used in nanoimprint to fabricate semiconductors and functional devices. The evaporation of the solvent and the sintering of the Au PMNF are investigated. The key parameters, which influence the morphology of patterning, such as the radius of metal particles, the concentration of metal particles, the Hamaker constant of the solvent, viscosity of the fluids and the evaporation velocity, are analyzed. Based on a two-sphere sintering model, the equations are derived, which represent the relationships between the relative shrinkage and radius of the metal particles, sintering temperature and time. The optimal parameters for the heat treatment are provided in nanoimprint.
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Improvement of the Open Circuit Voltage of CZTSe Thin-Film Solar Cells by Surface Sulfurization Using SnS
SUN Ding, GE Yang, XU Sheng-Zhi, ZHANG Li, LI Bao-Zhang, WANG Guang-Cai, WEI Chang-Chun, ZHAO Ying, ZHANG Xiao-Dan
Chin. Phys. Lett. 2015, 32 (12):
128401
.
DOI: 10.1088/0256-307X/32/12/128401
The objective of this study is to find an effective method to improve Voc without Jsc loss for Cu2ZnSnSe4 (CZTSe) thin film solar cells, which have been fabricated by the one step co-evaporation technique. Surface sulfurization of CZTSe thin films is carried out by using one technique that does not utilize toxic H2S gas; a sequential evaporation of SnS after CZTSe deposition and the annealing of CZTSe thin films in selenium vapor. A Cu2ZnSn(S,Se)4 (CZTSSe) thin layer is grown on the surface of the CZTSe thin film after the annealing. The conversion efficiency of the completed device is improved due to the enhancement of Voc, which could be attributed to the formation of a hole-recombination barrier at the surface or the passivation of the surface and grain boundary by S incorporation.
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Factors That Affect the Centrality Controllability of Scale-Free Networks
HU Dong, SUN Xian, LI Ping, CHEN Yan, ZHANG Jie
Chin. Phys. Lett. 2015, 32 (12):
128901
.
DOI: 10.1088/0256-307X/32/12/128901
The influence of a node in a network can be characterized by its macroscopic properties such as eigenvector centrality. An issue of significant theoretical and practical interest is to modify the influence or roles of the nodes in a network, and recent advances indicate that this can be achieved by just controlling a subset of nodes: the so-called controllers. However, the relationship between the structural properties of a network and its controllability, e.g., the control of node importance, is still not well understood. Here we systematically explore this relationship by constructing scale-free networks with a fixed degree sequence and tunable network characteristics. We calculate the relative size (nC*) of the minimal controlling set required to control the importance of each individual node in a network. It is found that while clustering has no significant impact on nC*, changes in degree–degree correlations, heterogeneity and the average degree of networks demonstrate a discernible impact on its controllability.
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43 articles
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