| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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High Signal-to-Noise Ratio Hall Devices with a 2D Structure of Dual δ-Doped GaAs/AlGaAs for Low Field Magnetometry |
| CHEN Di1**, ZHAO Bai-Qin1, ZHANG Xin2 |
1Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
2Shangdong Wave of Huaguang Photonics LTD, Jinan 250101
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| Cite this article: |
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CHEN Di, ZHAO Bai-Qin, ZHANG Xin 2015 Chin. Phys. Lett. 32 128502 |
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Abstract Single and dual δ-doped GaAs/AlGaAs two-dimensional electron gas (2DEG) Hall devices for low magnetic field detection at room temperature are prepared. The sensitivity and noise spectrum of the Hall devices are measured for evaluating the signal-to-noise ratio performance. It is observed that the dual δ-doped Hall devices achieve a minimum detectable magnetic field as low as 303 nT, which is better than the single δ-doped Hall device prepared under the same growth condition.
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Received: 11 September 2015
Published: 05 January 2016
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| PACS: |
85.30.-z
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(Semiconductor devices)
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07.07.Df
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(Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing)
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85.35.Be
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(Quantum well devices (quantum dots, quantum wires, etc.))
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73.20.At
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(Surface states, band structure, electron density of states)
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