| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Passive Quenching Electronics for Geiger Mode 4H-SiC Avalanche Photodiodes |
| LIU Fei1,2, ZHOU Dong1,2, LU Hai1,2**, CHEN Dun-Jun1,2, REN Fang-Fang1,2, ZHANG Rong1,2, ZHENG You-Dou1,2 |
1Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093
2Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093
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| Cite this article: |
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LIU Fei, ZHOU Dong, LU Hai et al 2015 Chin. Phys. Lett. 32 128501 |
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Abstract We design and fabricate 4H-SiC UV avalanche photodiodes (APDs) with positive beveled mesa, which exhibit low leakage current and high avalanche gain when working in the Geiger mode. The single photon counting performance of the SiC APDs is studied by using a passive-quenching circuit. A new method to determine the exact breakdown voltage of the APD is proposed based on the initial emergence of photon count pulses. The photon count rate and dark count rate of the APD are also evaluated as a function of quenching resistance.
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Received: 09 July 2015
Published: 05 January 2016
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| PACS: |
85.30.De
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(Semiconductor-device characterization, design, and modeling)
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85.60.Gz
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(Photodetectors (including infrared and CCD detectors))
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85.60.Dw
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(Photodiodes; phototransistors; photoresistors)
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