High Thermoelectric Figure of Merit of Ag<sub>8</sub>SnS<sub>6</sub> Component Prepared by Electrodeposition Technique

doi:10.1088/0256-307X/32/12/127402

Chin. Phys. Lett.

2015, Vol. 32

Issue (12): 127402 DOI: 10.1088/0256-307X/32/12/127402

CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES

High Thermoelectric Figure of Merit of Ag₈SnS₆ Component Prepared by Electrodeposition Technique

TAHER Ghrib^1**, AMAL Lafy Al-Otaibi¹, MUNIRAH Abdullah Almessiere¹, IBTISSEM Ben Assaker², RADHOUANE Chtourou²

¹Laboratory of Physical Alloys, Science Faculty of Dammam, University of Dammam, Saudi Arabia
²Laboratoire Photovolta?que, Centre de Recherches et des Technologies de l'Energie Technopole borj cedria, Bp 95, hammam lif 2050, Tunisie

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TAHER Ghrib, AMAL Lafy Al-Otaibi, MUNIRAH Abdullah Almessiere et al 2015 Chin. Phys. Lett. 32 127402

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Abstract A new thermoelectric material Ag₈SnS₆, with ultra?low thermal conductivity in thin film shape, is prepared on indium tin oxide coated glass (ITO) substrates using a chemical process via the electrodeposition technique. The structural, thermal and electrical properties are studied and presented in detail, which demonstrate that the material is of semiconductor type, orthorhombic structure, with a band gap in the order of 1.56 eV and a free carrier concentration of 1.46×10¹⁷ cm^?3. The thermal conductivity, thermal diffusivity, thermal conduction mode, Seebeck coefficient and electrical conductivity are determined using the photo-thermal deflection technique combined with the Boltzmann transport theory and Cahill's model, showing that the Ag₈SnS₆ material has a low thermal conductivity of 3.8 Wm^?1K^?1, high electrical conductivity of 2.4×10⁵ Sm^?1, Seebeck coefficient of -180 μVK^?1 and a power factor of 6.9 mWK^?2m^?1, implying that it is more efficient than those obtained in recently experimental investigations for thermoelectric devices.

Received: 29 August 2015 Published: 05 January 2016

PACS:	74.25.Fy
	85.80.Fi	(Thermoelectric devices)
	82.45.Aa	(Electrochemical synthesis)

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https://cpl.iphy.ac.cn/10.1088/0256-307X/32/12/127402 OR https://cpl.iphy.ac.cn/Y2015/V32/I12/127402

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	TAHER Ghrib
	AMAL Lafy Al-Otaibi
	MUNIRAH Abdullah Almessiere
	IBTISSEM Ben Assaker
	RADHOUANE Chtourou

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