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Experimental Results with Siliconization in Reversed Field Pinch Device
ZHANG Peng, LI Qiang, LUO Cui-wen, LI Jie-ping, FANG Shui-quan,
YI Ping, XUE Jun, LI Ke-hua, LUO Jun-lin, CAO Zeng, HONG Wen-yu,
ZHANG Nian-man, WANG Quan-ming, LU Jie, HUANG Ming,
ZHONG Yun-ze, ZHANG Qing-chun, LUO Cui-xian
Chin. Phys. Lett. 1996, 13 (5):
378-381
.
Reversed field pinch ( RFP ) and ultralow safety factor plasma experimental performances with pulsed discharge cleaning and siliconization on SWIP-RFP device are presented. The wall siliconization was performed by using the device discharges. The experimental results with siliconization in RFP devices showed that the impurity concentrations were decreased in the plasma and better plasma parameters were obtained in the device.
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Dislocation Movement in Nitrogen-Doped Czochralski Silicon
WEI Ya-dong, LIANG Jun-wu
Chin. Phys. Lett. 1996, 13 (5):
382-385
.
Dislocation movement in N-doped Czochralski silicon ( Cz-Si ) was surveyed by four point bend method, Dislocation movement velocities in Cz-Si doped with nitrogen, with both nitrogen and antimony, and with only antimony were investigated, The order of measured dislocation movement velocities, at 700°C ≤ T≤ 800°C and under resolved stress σ = 4.1 kg/ mm2, was Vsb,O >VN,sb,O >VN,O. The experiments showed that nitrogen doping could retard the movement of dislocations.
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YBa2Cu3O7 Bicrystal Josephson Junctions and dc SQUIDs
Yu. V. Kislinskii, ZHAO Bai-ru, WU Pei-jun, PENG Zhi-qiang, CHEN Ying-fei, YANG Tao, CHEN Lie, SUN Ji-jun, XU Bo, WU Fei, ZHOU Yue-liang, LI Lin, ZHAO Zhong-xian, E. A. Stepantsov
Chin. Phys. Lett. 1996, 13 (5):
390-393
.
Bicrystal Josephson junctions and direct current superconducting quantum interference devices ( dc SQUIDs) were prepares on YBa2Cu3O7( YBCO ) thin films deposited on yttrium stabilized ZrO2 bicrystal substrates The critical current densities Jc ~ 2 X 106 A/cm2 for YBCO thin film and (1 - 3 ) X 103 A/cm2 at boundaries were obtained at 77K. For YBCO Josephson junction made on 28°misorientated boundary, the Shapiro steps were observed. The dc SQUID was made on the 32° misorientated boundary junctions, which consisted of 40 X 40μm of loop and 2000 X 2000μm planar superconductive flux focuser. The voltage modulation depth of this SQUID was 6μV, and the magnetic field sensitivity was estimated to be ~ 2pT /√Hz from the measured noise level.
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21 articles
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