Buried CoSi2 Layers in Silicon on Insulator Formed by Wafer Bonding
ZHU Shi-yang, HUANG Yi-ping, RU Guo-ping
Department of Electronic Engineering, Fudan University, Shanghai 200433
Buried CoSi2 Layers in Silicon on Insulator Formed by Wafer Bonding
ZHU Shi-yang;HUANG Yi-ping;RU Guo-ping
Department of Electronic Engineering, Fudan University, Shanghai 200433
关键词 ：
73.40.Ty ,
73.40.Vz ,
73.30.+y
Abstract ： A novel single-crystalline Si/poly-CoSi2 /SiO2 /Sub-Si structure has been successfully formed by silicon wafer bonding technique. The surface energy of the as-bonded wafers at room temperature is about 70erg/cm2 . Annealing at 800°C for 30min does not only strengthen the bond to about 1100erg/cm2 , but also employs solid phase reaction of sputtered cobalt to form a buried poly-crystalline CoSi2 layer with a resistivity of approximately 160μΩ.cm. Two bond processes has been compared. The quality of the sputtered Si-SiO2 bonding is better than that of the sputtered Si-Si bonding.
Key words ：
73.40.Ty
73.40.Vz
73.30.+y
出版日期: 1999-04-01
:
73.40.Ty
(Semiconductor-insulator-semiconductor structures)
73.40.Vz
(Semiconductor-metal-semiconductor structures)
73.30.+y
(Surface double layers, Schottky barriers, and work functions)
引用本文:
ZHU Shi-yang;HUANG Yi-ping;RU Guo-ping. Buried CoSi2 Layers in Silicon on Insulator Formed by Wafer Bonding[J]. 中国物理快报, 1999, 16(4): 282-284.
2 Layers in Silicon on Insulator Formed by Wafer Bonding. Chin. Phys. Lett., 1999, 16(4): 282-284.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1999/V16/I4/282
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