I - V Characteristics of Metal/Polynitrobenzene Junctions
ZHENG Hai-peng, ZHANG Rui-feng, HUANG Jing-song1 , LIU Shi-yong1 , SHEN Jia-cong
State Key Laboratory of Supramolecular Structure and Spectroscopy, Department of Chemistry,
1 National Integrated Optoelectronics Laboratory, Jilin University, Changchun 130023
I - V Characteristics of Metal/Polynitrobenzene Junctions
ZHENG Hai-peng;ZHANG Rui-feng;HUANG Jing-song1 ;LIU Shi-yong1 ;SHEN Jia-cong
State Key Laboratory of Supramolecular Structure and Spectroscopy, Department of Chemistry,
1 National Integrated Optoelectronics Laboratory, Jilin University, Changchun 130023
关键词 ：
73.30.+y ,
73.61.Ph ,
73.40.Ns
Abstract ： We used a new polyphenylene derivative-polynitrobenzene (PNB) to construct metal/polymer Schottky devices, and studied the influence of polymer film thickness, thermal treatment and different molar-ratio of dopant on the electrical properties of the junctions. The Al/PNB junction with 100nm in thickness of pure PNB film exhibited a relatively good I - V behavior. But the open voltage and rectification chatacteristics improved greatly when the PNB film was heated or lightly doped with poly-N-vinylcarbazole.
Key words ：
73.30.+y
73.61.Ph
73.40.Ns
出版日期: 1997-05-01
:
73.30.+y
(Surface double layers, Schottky barriers, and work functions)
73.61.Ph
(Polymers; organic compounds)
73.40.Ns
(Metal-nonmetal contacts)
引用本文:
ZHENG Hai-peng;ZHANG Rui-feng;HUANG Jing-song;LIU Shi-yong;SHEN Jia-cong. I - V Characteristics of Metal/Polynitrobenzene Junctions[J]. 中国物理快报, 1997, 14(5): 375-378.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1997/V14/I5/375
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