A New Silicon-on-Insulator Structure of Metal-Oxide-Semiconductor Field Effect Transistor to Reduce Self-Heating Effect
LIN Qing, ZHANG Zheng-Xuan, ZHU Ming, XIE Xin-Yun, SONG Hua-Qing, LIN Cheng-Lu
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
A New Silicon-on-Insulator Structure of Metal-Oxide-Semiconductor Field Effect Transistor to Reduce Self-Heating Effect
LIN Qing;ZHANG Zheng-Xuan;ZHU Ming;XIE Xin-Yun;SONG Hua-Qing;LIN Cheng-Lu
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
Abstract： A new silicon-on-insulator (SOI) device structure is proposed. This new design provides a new path to reduce the temperature of the channel of SOI metal-oxide-semiconductor field effect transistor (MOSFET). The device has been verified in two-dimensional device simulation. The new structure reduces the self-heating effect of SOI MOSFET and decreases the negative differential transconductance.
LIN Qing;ZHANG Zheng-Xuan;ZHU Ming;XIE Xin-Yun;SONG Hua-Qing;LIN Cheng-Lu. A New Silicon-on-Insulator Structure of Metal-Oxide-Semiconductor Field Effect Transistor to Reduce Self-Heating Effect[J]. 中国物理快报, 2003, 20(1): 158-160.
LIN Qing, ZHANG Zheng-Xuan, ZHU Ming, XIE Xin-Yun, SONG Hua-Qing, LIN Cheng-Lu. A New Silicon-on-Insulator Structure of Metal-Oxide-Semiconductor Field Effect Transistor to Reduce Self-Heating Effect. Chin. Phys. Lett., 2003, 20(1): 158-160.
2003, Vol. 20 
