Chalcogenide Random Access Memory Cell with Structure of W Sub-Microtube Heater Electrode
LIU Bo1, FENG Gao-Ming1, WU Liang-Cai1, SONG Zhi-Tang1, LIU Qi-Bin1, FENG Song-Lin1, CHEN Bomy2
1Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
2Silicon Storage Technology, Inc. 1171 Sonora Court, Sunnyvale, CA 94086 USA
Chalcogenide Random Access Memory Cell with Structure of W Sub-Microtube Heater Electrode
LIU Bo1;FENG Gao-Ming1;WU Liang-Cai1;SONG Zhi-Tang1;LIU Qi-Bin1;FENG Song-Lin1;CHEN Bomy2
1Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
2Silicon Storage Technology, Inc. 1171 Sonora Court, Sunnyvale, CA 94086 USA
Abstract： In order to reduce the reset current of chalcogenide random access memory, a W sub-microtube heater electrode with outer/inner diameter of 260/100nm, which was fabricated with standard 0.18-μm echnology, is proposed for the first time to achieve a reset current of about 0.5mA. The reasons may be that sub-microtube increases the number of electrode edge and thermal efficiency is improved greatly because the thermal density on the edge of sub-microtube electrode is generally the highest.
(Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures)
引用本文:
LIU Bo;FENG Gao-Ming;WU Liang-Cai;SONG Zhi-Tang;LIU Qi-Bin;FENG Song-Lin;CHEN Bomy. Chalcogenide Random Access Memory Cell with Structure of W Sub-Microtube Heater Electrode[J]. 中国物理快报, 2007, 24(1): 262-264.
LIU Bo, FENG Gao-Ming, WU Liang-Cai, SONG Zhi-Tang, LIU Qi-Bin, FENG Song-Lin, CHEN Bomy. Chalcogenide Random Access Memory Cell with Structure of W Sub-Microtube Heater Electrode. Chin. Phys. Lett., 2007, 24(1): 262-264.
2007, Vol. 24 
