Modelling of Chirality-Dependent Current--Voltage Characteristics of Carbon-Nanotube Field-Effect Transistors
ZHAO Xu, WANG Yan, YU Zhi-Ping
Institute of Microelectronics, Tsinghua University, Beijing 100084
Modelling of Chirality-Dependent Current--Voltage Characteristics of Carbon-Nanotube Field-Effect Transistors
ZHAO Xu;WANG Yan;YU Zhi-Ping
Institute of Microelectronics, Tsinghua University, Beijing 100084
关键词 ：
85.30.De ,
85.30.Tv ,
85.35.Kt
Abstract ： Current--voltage characteristics of ballistic carbon-nanotube field-effect transistors are characterized with an iterative simulation program. The influence of carbon-nanotube chirality and diameter on the output current is considered. An analytical current--voltage expression under the quantum capacitance limit and low-voltage application is derived. Our simulation results are compared with actual measurement data.
Key words ：
85.30.De
85.30.Tv
85.35.Kt
出版日期: 2006-05-01
:
85.30.De
(Semiconductor-device characterization, design, and modeling)
85.30.Tv
(Field effect devices)
85.35.Kt
(Nanotube devices)
引用本文:
ZHAO Xu;WANG Yan;YU Zhi-Ping. Modelling of Chirality-Dependent Current--Voltage Characteristics of Carbon-Nanotube Field-Effect Transistors[J]. 中国物理快报, 2006, 23(5): 1327-1330.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2006/V23/I5/1327
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