Investigation of Microstructures of AlAs Oxides Before and After Oxidation
WANG Yong1, JIA Hai-Qiang1, MAI Zhen-Hong1, JIA Quan-Jie2, JIANG Xiao-Ming2
1Institute of Physics, Chinese Academy of Sciences, Beijing 100080
2Institute of High Energy Physics, Beijing Synchrotron Radiation Facility, Beijing 100039
Investigation of Microstructures of AlAs Oxides Before and After Oxidation
WANG Yong1;JIA Hai-Qiang1;MAI Zhen-Hong1;JIA Quan-Jie2;JIANG Xiao-Ming2
1Institute of Physics, Chinese Academy of Sciences, Beijing 100080
2Institute of High Energy Physics, Beijing Synchrotron Radiation Facility, Beijing 100039
Abstract： The effect of lateral oxidation on microstructures of the GaAs/AlAs/GaAs heterostructure was studied by x-ray specular reflectivity, nonspecular scattering and diffraction. The GaAs/Al2O3/GaAs multilayer was obtained after oxidation of the GaAs/AlAs/GaAs sample. The results show that, before oxidation, there are two 40-Å-thick intermixing layers, one located between the AlAs sublayer and the GaAs substrate, and the other between the AlAs sublayer and the upper GaAs sublayer. After oxidation, these two intermixing sublayers disappear. The AlAs was oxidized into amorphous Al2O3 totally. The surface and interface roughnesses of the sample also decrease after oxidation.
WANG Yong;JIA Hai-Qiang;MAI Zhen-Hong;JIA Quan-Jie;JIANG Xiao-Ming. Investigation of Microstructures of AlAs Oxides Before and After Oxidation[J]. 中国物理快报, 2004, 21(6): 1128-1130.
WANG Yong, JIA Hai-Qiang, MAI Zhen-Hong, JIA Quan-Jie, JIANG Xiao-Ming. Investigation of Microstructures of AlAs Oxides Before and After Oxidation. Chin. Phys. Lett., 2004, 21(6): 1128-1130.
2004, Vol. 21 
