Nonlinear Electrical Characteristics of Antimony and Copper Doped Tin Oxide Based Varistor Ceramics
WANG Chun-Ming, WANG Jin-Feng, SU Wen-Bin
School of Physics and Microelectronics, Shandong University, Jinan 250100
Nonlinear Electrical Characteristics of Antimony and Copper Doped Tin Oxide Based Varistor Ceramics
WANG Chun-Ming;WANG Jin-Feng;SU Wen-Bin
School of Physics and Microelectronics, Shandong University, Jinan 250100
关键词 ：
84.32.Ff ,
73.30.+y ,
77.22.Ch
Abstract ： The novel CuO-doped dense tin oxide varistor ceramics are investigated. The densification of tin oxide varistor ceramics could be greatly improved by doping copper oxide additives. The introduction of antimony additives into a SnO2 .CuO ceramic system would make it possess excellent nonlinearity. The sample doped with 0.05mol% Sb2 O3 possesses the highest nonlinearity coefficient (α=17.9) and the lowest leakage current density (JL =52μA cm-2 ) among all the samples. A modified defect barrier model is introduced to explain the formation of the grain-boundary barrier. The nonlinear behaviour of (Cu, Sb)-doped SnO2 varistor system could be explained by the barrier model.
Key words ：
84.32.Ff
73.30.+y
77.22.Ch
出版日期: 2006-03-01
:
84.32.Ff
(Conductors, resistors (including thermistors, varistors, and photoresistors))
73.30.+y
(Surface double layers, Schottky barriers, and work functions)
77.22.Ch
(Permittivity (dielectric function))
引用本文:
WANG Chun-Ming;WANG Jin-Feng;SU Wen-Bin. Nonlinear Electrical Characteristics of Antimony and Copper Doped Tin Oxide Based Varistor Ceramics[J]. 中国物理快报, 2006, 23(3): 728-731.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2006/V23/I3/728
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