Temperature-Dependent Barrier Characteristics of Inhomogeneous In/p-Si (100) Schottky Barrier Diodes
N. Tugluoglu1, S. Karadeniz1, S. Acar2, M. Kasap2
1Department of Materials Research, Ankara Nuclear Research and Training Centre, 06100, Besevler, Ankara, Turkey
2Department of Physics, Faculty of Arts and Sciences, Gazi University, 06500, Ankara, Turkey
Temperature-Dependent Barrier Characteristics of Inhomogeneous In/p-Si (100) Schottky Barrier Diodes
N. Tugluoglu1;S. Karadeniz1;S. Acar2;M. Kasap2
1Department of Materials Research, Ankara Nuclear Research and Training Centre, 06100, Besevler, Ankara, Turkey
2Department of Physics, Faculty of Arts and Sciences, Gazi University, 06500, Ankara, Turkey
Abstract： The current-voltage (I--V) characteristics of In/p-Si Schottky barrier diodes have been determined in the temperature range 100--300K and have been interpreted based on the assumption of a Gaussian distribution of barrier heights due to barrier height inhomogeneities that prevail at the metal- semiconductor interface. The evaluation of the experimental I--V data reveals a decrease of zero-bias barrier height but an increase of ideality factor n with decreasing temperature. The inhomogeneities are considered to have Gaussian distribution with a mean zero-bias barrier height of 0.630eV and standard deviation of 0.083V at zero bias. Furthermore, the mean barrier height and the Richardson constant values were obtained to be 0.617eV and 20.71A K-2 cm-2, respectively, by means of the modified Richardson plot, (I0/T2) - (q2σs0/2k2T2) versus 1000/T.
2004, Vol. 21 
