Enhancement-Mode InAlAs/InGaAs/InP High Electron Mobility Transistor with Strained InAlAs Barrier Layer
AO Jin-Ping1,2 , ZENG Qing-Ming1 , ZHAO Yong-Lin1 , LI Xian-Jie1,2 ,
LIU Wei-Ji1 , LIU Shi-Yong2 , LIANG Chun-Guang1
1 Hebei Semiconductor Research Institute, Shijiazhuang 050051
2 National Integrated Optoelectronics Laboratory, Jilin University, Changchun 130023
Enhancement-Mode InAlAs/InGaAs/InP High Electron Mobility Transistor with Strained InAlAs Barrier Layer
AO Jin-Ping1,2 ;ZENG Qing-Ming1 ;ZHAO Yong-Lin1 ;LI Xian-Jie1,2 ,
LIU Wei-Ji1 ;LIU Shi-Yong2 ;LIANG Chun-Guang1
1 Hebei Semiconductor Research Institute, Shijiazhuang 050051
2 National Integrated Optoelectronics Laboratory, Jilin University, Changchun 130023
关键词 ：
85.30.De ,
85.30.Tv ,
73.30.+y
Abstract ： The relatively low Schottky barrier height on In0.52 Al0.48 As lattice-matched to InP has hampered the achievement of enhancement-mode InAlAs/InGaAs/InP high electron mobility transistors (E-HEMTs). By introducing lattice-mismatched strained aluminum-rich In0.45 Al0.55 As as the Schottky contact material to enhance the barrier height, we have developed InP-based InAlAs/InGaAs/InP E-HEMT with threshold voltage of about 150mV. A maximum extrinsic transconductance of 660mS/mm and output conductance of 15 mS/mm are measured for 1 μm-gate-length devices at room temperature. The devices also show excellent radio-frequency performance with cutoff frequency of 50 GHz and maximum oscillation frequency of 54 GHz.
Key words ：
85.30.De
85.30.Tv
73.30.+y
出版日期: 2000-08-01
:
85.30.De
(Semiconductor-device characterization, design, and modeling)
85.30.Tv
(Field effect devices)
73.30.+y
(Surface double layers, Schottky barriers, and work functions)
引用本文:
AO Jin-Ping;ZENG Qing-Ming;ZHAO Yong-Lin;LI Xian-Jie;
LIU Wei-Ji;LIU Shi-Yong;LIANG Chun-Guang. Enhancement-Mode InAlAs/InGaAs/InP High Electron Mobility Transistor with Strained InAlAs Barrier Layer[J]. 中国物理快报, 2000, 17(8): 619-620.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2000/V17/I8/619
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2000, Vol. 17 
