AlGaN/GaN HEMTs with an Insulated Gate Fabricated by Inductively Coupled Plasma Oxidization
HAO Zhi-Biao, GUO Tian-Yi, ZHANG Li-Chong, LUO Yi
State Key Laboratory on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084
AlGaN/GaN HEMTs with an Insulated Gate Fabricated by Inductively Coupled Plasma Oxidization
HAO Zhi-Biao;GUO Tian-Yi;ZHANG Li-Chong;LUO Yi
State Key Laboratory on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084
关键词 ：
85.30.Tv ,
73.40.Qv ,
82.80.Pv
Abstract ： Novel AlGaN/GaN high electron mobility transistors (HEMTs) with an insulated gate have been demonstrated by oxidizing the surface of an AlGaN layer using inductively coupled O2 plasma. X-ray photoelectron spectroscopy measurement reveals that O2 plasma treatment can produce a thin oxidized layer on the AlGaN surface. The insulated-gate devices are realized by plasma oxidization before gate metallization. The reverse gate leakage current of the fabricated HEMT has been reduced in two orders of magnitude, and the cut-off frequency increases from 5.4GHz to 6.5GHz.
Key words ：
85.30.Tv
73.40.Qv
82.80.Pv
出版日期: 2006-02-01
:
85.30.Tv
(Field effect devices)
73.40.Qv
(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
82.80.Pv
(Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.))
引用本文:
HAO Zhi-Biao;GUO Tian-Yi;ZHANG Li-Chong;LUO Yi. AlGaN/GaN HEMTs with an Insulated Gate Fabricated by Inductively Coupled Plasma Oxidization[J]. 中国物理快报, 2006, 23(2): 497-499.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2006/V23/I2/497
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