Organic Thin Film Field Effect Transistors with PMMA-GMA Gate Dielectric
JIANG Wen-Hai1, DU Guo-Tong1,2, YU Shu-Kun1, WANG Wei1, CHANG Yu-Chun1,2, WANG Xu3
1State Key Laboratory on Integrated Optoelectronics, Jilin University, Changchun 130012
2State Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Dalian 116023
3State Key Laboratory for Supermolecular Structure and Materials, Jilin University, Changchun 130012
Organic Thin Film Field Effect Transistors with PMMA-GMA Gate Dielectric
1State Key Laboratory on Integrated Optoelectronics, Jilin University, Changchun 130012
2State Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Dalian 116023
3State Key Laboratory for Supermolecular Structure and Materials, Jilin University, Changchun 130012
Abstract： We fabricate organic thin films using the copolymer of methyl methacrylate and glycidyl methacrylate (PMMA-GMA) as a gate dielectric with a simple top-contact structure. Copper phthalocyanine (CuPc) TFTs are fabricated and the influences of annealing on the performance are studied. The mobilities increase from 2.5× 103cm2/Vs to 4.2×103cm2/Vs and threshold voltages decrease from -18V to -10V after annealing. The good performances of the devices approach those obtained with inorganic gate dielectric materials such as silicon dioxide under the same technical conditions. It is fully proven that PMMA-GMA is a competitive candidate as an excellent gate insulation layer.
2006, Vol. 23 
