Preparation of AlGaN/GaN Heterostructures on Sapphire Using Light Radiation Heating Metal-Organic Chemical Vapor Deposition at Low Pressure
ZHOU Yu-Gang1 , SHEN Bo1 , ZHANG Rong1 , LI Wei-Ping1 , CHEN Peng1 , CHEN Zhi-Zhong1 , GU Shu-Lin1 , SHI Yi1 , Z. C. Huang2 , ZHENG You-Dou1
1 Solid State Microstructures Laboratory and Department of Physics, Nanjing University, Nanjing 210093
2 Raytheon ITSS, 4500 Forbes Bulivard, MD 20771, USA
Preparation of AlGaN/GaN Heterostructures on Sapphire Using Light Radiation Heating Metal-Organic Chemical Vapor Deposition at Low Pressure
ZHOU Yu-Gang1 ;SHEN Bo1 ;ZHANG Rong1 ;LI Wei-Ping1 ;CHEN Peng1 ;CHEN Zhi-Zhong1 ;GU Shu-Lin1 ;SHI Yi1 ;Z. C. Huang2 ;ZHENG You-Dou1
1 Solid State Microstructures Laboratory and Department of Physics, Nanjing University, Nanjing 210093
2 Raytheon ITSS, 4500 Forbes Bulivard, MD 20771, USA
关键词 :
81.15.Gh ,
61.10.-i ,
78.55.Cr
Abstract : AlGaN/GaN heterostructures on sapphire substrate were fabricated by using light radiation heating metalor-ganic chemical vapor deposition. Photoluminescence excitation spectra show that there are two abrupt slopes corresponding to the absorption edges of AlGaN and GaN, respectively. X-ray diffraction spectra clearly exhibit the GaN (0002), (0004), and AlGaN (0002), (0004) diffraction peaks, and no diffraction peak other than those from the GaN {0001} and AlGaN {0001} planes is found. Reciprocal space mapping indicates that there is notilt between the AlGaN layer and the GaN layer. All results also indicate that the sample is of sound quality and the A1 composition in the AlGaN layer is of high uniformity.
Key words :
81.15.Gh
61.10.-i
78.55.Cr
出版日期: 2000-08-01
:
81.15.Gh
(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
61.10.-i
78.55.Cr
(III-V semiconductors)
引用本文:
ZHOU Yu-Gang;SHEN Bo;ZHANG Rong;LI Wei-Ping;CHEN Peng;CHEN Zhi-Zhong;GU Shu-Lin;SHI Yi;Z. C. Huang;ZHENG You-Dou. Preparation of AlGaN/GaN Heterostructures on Sapphire Using Light Radiation Heating Metal-Organic Chemical Vapor Deposition at Low Pressure[J]. 中国物理快报, 2000, 17(8): 617-618.
ZHOU Yu-Gang, SHEN Bo, ZHANG Rong, LI Wei-Ping, CHEN Peng, CHEN Zhi-Zhong, GU Shu-Lin, SHI Yi, Z. C. Huang, ZHENG You-Dou. Preparation of AlGaN/GaN Heterostructures on Sapphire Using Light Radiation Heating Metal-Organic Chemical Vapor Deposition at Low Pressure. Chin. Phys. Lett., 2000, 17(8): 617-618.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2000/V17/I8/617
[1]
LI Meng-Ke;WANG De-Zhen;SHI Feng;DING Sheng;JIN Hong. Growth and Characterization of Trumpet-Shaped ZnO Microtube Arrays on Si Substrates [J]. 中国物理快报, 2007, 24(1): 236-239.
[2]
YONG Zhen-Zhong;GONG Jin-Long;WANG Zhen-Xia;ZHU Zhi-Yuan;HU Jian-Gang;PAN Qiang-Yan. Field Emission Enhancement of Carbon Nanotubes by Surface Modification [J]. 中国物理快报, 2007, 24(1): 233-235.
[3]
WANG Jian-Feng;ZHANG Bao-Shun;ZHANG Ji-Cai;ZHU Jian-Jun;WANG Yu-Tian;CHEN Jun; LIU Wei;JIANG De-Sheng;YAO Duan-Zheng; YANG Hui. Reduction of Dislocations in GaN Epilayer Grown on Si (111) Substrates using a GaN Intermedial Layer [J]. 中国物理快报, 2006, 23(9): 2591-2594.
[4]
ZHAO Huan;XU Ying-Qiang;NI Hai-Qiao;HAN Qin;WU Rong-Han;NIU Zhi-Chuan. Enhancement of Photoluminescence Intensity of GaInNAs/GaAs Quantum Wells by Two-Step Rapid Thermal Annealing [J]. 中国物理快报, 2006, 23(9): 2579-2582.
[5]
WU Nan-Chun;XIA Yi-Ben;TAN Shou-Hong;WANG Lin-Jun;LIU Jian-Min;SU Qing-Feng. Influence of Positive Bias on Electrical Properties of Undoped Nanocrystalline Diamond Films [J]. 中国物理快报, 2006, 23(9): 2595-2597.
[6]
CAO Yu-Lian;LIAN Peng;MA Wen-Quan;WANG Qing;WU Xu-Ming;HE Guo- Rong;LI Hui;WANG Xiao-Dong;SONG Guo-Feng;CHEN Liang-Hui. Influence of GaAsP Insertion Layers on Performance of InGaAsP/InGaP/AlGaAs Quantum-Well Laser [J]. 中国物理快报, 2006, 23(9): 2586-2586.
[7]
YU Nai-Sen;GUO Li-Wei;CHEN Hong;XING Zhi-Gang;WANG Jing;ZHU Xue-Liang;PENG Ming-Zeng;YAN Jian-Feng;JIA Hai-Qiang;ZHOU Jun-Ming. Luminescent Characteristics of Near Ultraviolet InGaN/GaN MQWs Grown on Grooved Sapphire Substrates Fabricated by Wet Chemical Etching [J]. 中国物理快报, 2006, 23(8): 2243-2246.
[8]
WANG Bao-Zhu;WANG Xiao-Liang;HU Guo-Xin;RAN Jun-Xue;WANG Xin-Hua;GUO Lun-Chun;XIAO Hong-Ling;LI Jian-Ping;ZENG Yi-Ping;LI Jin-Min;WANG Zhan-Guo. Growth and Annealing Study of Mg-Doped AlGaN and GaN/AlGaN Superlattices [J]. 中国物理快报, 2006, 23(8): 2187-2189.
[9]
LU Hong-Liang;LI Yan-Bo;XU Min;DING Shi-Jin;SUN Liang;ZHANG Wei;WANG Li-Kang. Characterization of Al2 O3 Thin Films on GaAs Substrate Grown by Atomic Layer Deposition [J]. 中国物理快报, 2006, 23(7): 1929-1931.
[10]
GUO Xing-Yuan;XU Da-Peng;DING Zhan-Hui;SU Wen-Hui;. Preparation and Raman Spectrum of Rutile Single Crystals Using Floating Zone Method [J]. 中国物理快报, 2006, 23(6): 1645-1647.
[11]
ZHOU Bing-Qing;LIU Feng-Zhen;ZHANG Qun-Fang;XU Ying;ZHOU Yu-Qin;LIU Jin-Long;ZHU Mei-Fang. Fabrication of c-Si:H(p)/c-Si(n) Heterojunction Solar Cells with Microcrystalline Emitters [J]. 中国物理快报, 2006, 23(6): 1638-1640.
[12]
SUN Jian;BAI Yi-Zhen;YANG Tian-Peng;XU Yi-Bin;WANG Xin-Sheng;DU Guo-Tong;WU Han-Hua. Deposition of ZnO Films on Freestanding CVD Thick Diamond Films [J]. 中国物理快报, 2006, 23(5): 1321-1323.
[13]
XIA Dong-Yan;DAI Lun;XU Wan-Jin;YOU Li-Ping;ZHANG Bo-Rui;RAN Guang-Zhao;QIN Guo-Gang;. Synthesis and PL Properties of ZnSe Nanowires with Zincblende and Wurtzite Structures [J]. 中国物理快报, 2006, 23(5): 1317-1320.
[14]
WANG Fang-Zhen;CHEN Zhang-Hai;GONG Qian;R. Nötzel;BAI Li-Hui;SHEN Xue-Chu. Efficient Exciton Transfer from In0.35 Ga0.65 As Template into InAs Quantum Dots Grown on GaAs (311)B Substrates [J]. 中国物理快报, 2006, 23(5): 1310-1313.
[15]
WANG Xiao-Ping;WANG Li-Jun;ZHANG Bing-Lin;YAO Ning;ZANG Qi-Ren;CHEN Jun;DUAN Xin-Chao. An Effective Method for Improvement of Field Electron Emission Site Density and Uniformity of Amorphous Carbon Thin Films [J]. 中国物理快报, 2006, 23(5): 1314-1316.