Fabrication of c-Si:H(p)/c-Si(n) Heterojunction Solar Cells with Microcrystalline Emitters
ZHOU Bing-Qing1,2, LIU Feng-Zhen2, ZHANG Qun-Fang2, XU Ying3, ZHOU Yu-Qin2, LIU Jin-Long2, ZHU Mei-Fang2
1Department of Physics, Inner Mongolia Normal University, Huhhot 010022
2Department of Physics, Graduate School, Chinese Academy of Sciences, Beijing 100049
4Beijing Solar Energy Research Institute, Beijing 100083
Fabrication of c-Si:H(p)/c-Si(n) Heterojunction Solar Cells with Microcrystalline Emitters
1Department of Physics, Inner Mongolia Normal University, Huhhot 010022
2Department of Physics, Graduate School, Chinese Academy of Sciences, Beijing 100049
4Beijing Solar Energy Research Institute, Beijing 100083
Abstract： The p-type microcrystalline silicon (μc-Si:H) on n-type crystalline silicon (c-Si) heterojunction solar cells is fabricated by radio-frequency plasma enhanced chemical vapour deposition (rf-PECVD). The effect of the μc-Si:H p-layers on the performance of the heterojunction solar cells is investigated. Optimum μc-Si:H p-layer is obtained with hydrogen dilution ratio of 99.65%, rf-power of 0.08W/cm2, gas phase doping ratio of 0.125%, and the p-layer thickness of 15nm. We fabricate μc-Si:H(p)/c-Si(n) heterojunction solar cells without texturing and obtained an efficiency of 13.4%. The comparisons of the solar-cell performances using different surface passivation techniques are discussed.
2006, Vol. 23 
