Synthesis and PL Properties of ZnSe Nanowires with Zincblende and Wurtzite Structures
XIA Dong-Yan1 , DAI Lun1,2 , XU Wan-Jin1,2 , YOU Li-Ping1,3 , ZHANG Bo-Rui1,2 , RAN Guang-Zhao1,2 , QIN Guo-Gang1,2
1 School of Physics, Peking University, Beijing 100871
2 State Key Lab for Mesoscopic Physics, Peking University, Beijing 100871
3 Electron Microscopy Laboratory, Peking University, Beijing 100871
Synthesis and PL Properties of ZnSe Nanowires with Zincblende and Wurtzite Structures
XIA Dong-Yan1 ;DAI Lun1,2 ;XU Wan-Jin1,2 ;YOU Li-Ping1,3 ;ZHANG Bo-Rui1,2 ;RAN Guang-Zhao1,2 ;QIN Guo-Gang1,2
1 School of Physics, Peking University, Beijing 100871
2 State Key Lab for Mesoscopic Physics, Peking University, Beijing 100871
3 Electron Microscopy Laboratory, Peking University, Beijing 100871
关键词 ：
81.05.Dz ,
61.46.+w ,
61.66.-f ,
78.55.Et ,
81.15.Gh
Abstract ： Single crystalline ZnSe nanowires with both zincblende and wurtzite structures have been synthesized via a chemical vapour deposition method under different growth conditions. The nanowires are usually 50--80nm in diameter, and several tens of microns in length. Room-temperature photoluminescence spectra from zincblende and wurtzite ZnSe nanowires show a broad luminescence band peaked at around 2.71eV and a deep level emission band peaked at around 2.00eV, respectively. Effects of post-growth annealing on the photoluminescence of these nanowires have been investigated. Strong room-temperature band-edge emission could be obtained from the annealed zincblende ZnSe nanowires.
Key words ：
81.05.Dz
61.46.+w
61.66.-f
78.55.Et
81.15.Gh
出版日期: 2006-05-01
:
81.05.Dz
(II-VI semiconductors)
61.46.+w
61.66.-f
(Structure of specific crystalline solids)
78.55.Et
(II-VI semiconductors)
81.15.Gh
(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
引用本文:
XIA Dong-Yan;DAI Lun;XU Wan-Jin;YOU Li-Ping;ZHANG Bo-Rui;RAN Guang-Zhao;QIN Guo-Gang;. Synthesis and PL Properties of ZnSe Nanowires with Zincblende and Wurtzite Structures[J]. 中国物理快报, 2006, 23(5): 1317-1320.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2006/V23/I5/1317
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