Growth and Annealing Study of Mg-Doped AlGaN and GaN/AlGaN Superlattices
WANG Bao-Zhu, WANG Xiao-Liang, HU Guo-Xin, RAN Jun-Xue, WANG Xin-Hua, GUO Lun-Chun, XIAO Hong-Ling, LI Jian-Ping, ZENG Yi-Ping, LI Jin-Min, WANG Zhan-Guo
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
Growth and Annealing Study of Mg-Doped AlGaN and GaN/AlGaN Superlattices
Abstract： Mg-doped AlGaN and GaN/AlGaN superlattices are grown by metalorganic chemical vapour deposition (MOCVD). Rapid thermal annealing (RTA) treatments are carried out on the samples. Hall and high resolution x-ray diffraction measurements are used to characterize the electrical and structural prosperities of the as-grown and annealed samples, respectively. The results of hall measurements show that after annealing, the Mg-doped AlGaN sample can not obtain the distinct hole concentration and can acquire a resistivity of 1.4×103Ωcm. However, with the same annealing treatment, the GaN/AlGaN superlattice sample has a hole concentration of 1.7×1017cm-3 and a resistivity of 5.6Ωcm. The piezoelectric field in the GaN/AlGaN superlattices improves the activation efficiency of Mg acceptors, which leads to higher hole concentration and lower p-type resistivity.
WANG Bao-Zhu;WANG Xiao-Liang;HU Guo-Xin;RAN Jun-Xue;WANG Xin-Hua;GUO Lun-Chun;XIAO Hong-Ling;LI Jian-Ping;ZENG Yi-Ping;LI Jin-Min;WANG Zhan-Guo. Growth and Annealing Study of Mg-Doped AlGaN and GaN/AlGaN Superlattices[J]. 中国物理快报, 2006, 23(8): 2187-2189.
WANG Bao-Zhu, WANG Xiao-Liang, HU Guo-Xin, RAN Jun-Xue, WANG Xin-Hua, GUO Lun-Chun, XIAO Hong-Ling, LI Jian-Ping, ZENG Yi-Ping, LI Jin-Min, WANG Zhan-Guo. Growth and Annealing Study of Mg-Doped AlGaN and GaN/AlGaN Superlattices. Chin. Phys. Lett., 2006, 23(8): 2187-2189.
2006, Vol. 23 
