Characterization of Al2O3 Thin Films on GaAs Substrate Grown by Atomic Layer Deposition
LU Hong-Liang1, LI Yan-Bo2, XU Min1, DING Shi-Jin1, SUN Liang1, ZHANG Wei1, WANG Li-Kang1
1State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai 200433
2College of Electronic and Information Engineering, Hebei University, Baoding 071002
Characterization of Al2O3 Thin Films on GaAs Substrate Grown by Atomic Layer Deposition
LU Hong-Liang1;LI Yan-Bo2;XU Min1;DING Shi-Jin1;SUN Liang1;ZHANG Wei1;WANG Li-Kang1
1State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai 200433
2College of Electronic and Information Engineering, Hebei University, Baoding 071002
Abstract： Al2O3 thin films are grown by atomic layer deposition on GaAs substrates at 300°C. The structural properties of the Al2O3 thin film and the Al2O3/GaAs interface are characterized using x-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), and x-ray photoelectron spectroscopy (XPS). The XRD results show that the as-deposited Al2O3 film is amorphous. For 30 atomic layer deposition growth cycles, the thicknesses of the Al2O3 thin film and the interface layer from the HRTEM are 3.3nm and 0.5nm, respectively. XPS analyses reveal that the Al2O3/GaAs interface is almost free from As2O3.
LU Hong-Liang;LI Yan-Bo;XU Min;DING Shi-Jin;SUN Liang;ZHANG Wei;WANG Li-Kang. Characterization of Al2O3 Thin Films on GaAs Substrate Grown by Atomic Layer Deposition[J]. 中国物理快报, 2006, 23(7): 1929-1931.
LU Hong-Liang, LI Yan-Bo, XU Min, DING Shi-Jin, SUN Liang, ZHANG Wei, WANG Li-Kang. Characterization of Al2O3 Thin Films on GaAs Substrate Grown by Atomic Layer Deposition. Chin. Phys. Lett., 2006, 23(7): 1929-1931.
2006, Vol. 23 
