Characteristics of High In-Content InGaN Alloys Grown by MOCVD
ZHU Xue-Liang, GUO Li-Wei, YU Nai-Sen, PENG Ming-Zeng, YAN Jian-Feng, GE Bing-Hui, JIA Hai-Qiang,
CHEN Hong, ZHOU Jun-Ming
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences,
Beijing 100080
Characteristics of High In-Content InGaN Alloys Grown by MOCVD
ZHU Xue-Liang;GUO Li-Wei;YU Nai-Sen;PENG Ming-Zeng;YAN Jian-Feng;GE Bing-Hui;JIA Hai-Qiang;
CHEN Hong;ZHOU Jun-Ming
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences,
Beijing 100080
关键词 ：
81.15.Gh ,
61.10.Nz ,
68.37.Ps
Abstract ： InN and In0.46 Ga0.54 N films are grown on sapphire with a GaN buffer by metalorganic chemical vapour deposition (MOCVD). Both high resolution x-ray diffraction and high resolution transmission electron microscopy results reveal that these films have a hexagonal structure of single crystal. The thin InN film has a high mobility of 475 cm2 V-1 s-1 and that of In0.46 Ga0.54 is 163 cm2 V-1 s-1 ;. Room-temperature photoluminescence measurement of the InN film shows a peak at 0.72 eV, confirming that a high quality InN film is fabricated for applications to full spectrum solar cells.
Key words ：
81.15.Gh
61.10.Nz
68.37.Ps
出版日期: 2006-12-01
:
81.15.Gh
(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
61.10.Nz
68.37.Ps
(Atomic force microscopy (AFM))
引用本文:
ZHU Xue-Liang;GUO Li-Wei;YU Nai-Sen;PENG Ming-Zeng;YAN Jian-Feng;GE Bing-Hui;JIA Hai-Qiang;
CHEN Hong;ZHOU Jun-Ming. Characteristics of High In-Content InGaN Alloys Grown by MOCVD[J]. 中国物理快报, 2006, 23(12): 3369-3372.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2006/V23/I12/3369
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