Reduction of Dislocations in GaN Epilayer Grown on Si (111) Substrates using a GaN Intermedial Layer
WANG Jian-Feng1,2 , ZHANG Bao-Shun2 , ZHANG Ji-Cai2 , ZHU Jian-Jun2 , WANG Yu-Tian2 , CHEN Jun2 , LIU Wei2 ,JIANG De-Sheng2 , YAO Duan-Zheng1 , YANG Hui2
1 Department of Physics, Wuhan University, Wuhan 430072
2 Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
Reduction of Dislocations in GaN Epilayer Grown on Si (111) Substrates using a GaN Intermedial Layer
WANG Jian-Feng1,2 ;ZHANG Bao-Shun2 ;ZHANG Ji-Cai2 ;ZHU Jian-Jun2 ;WANG Yu-Tian2 ;CHEN Jun2 ; LIU Wei2 ,JIANG De-Sheng2 ;YAO Duan-Zheng1 ; YANG Hui2
1 Department of Physics, Wuhan University, Wuhan 430072
2 Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
关键词 ：
81.05.Ea ,
81.15.Gh
Abstract ： GaN intermedial layers grown under different pressures are inserted between GaN epilayers and AlN/Si(111) substrates. In situ optical reflectivity measurements show that a transition from the three-dimensional (3D) mode to the 2D one occurs during the GaN epilayer growth when a higher growth pressure is used during the preceding GaN intermedial layer growth, and an improvement of the crystalline quality of GaN epilayer will be made. Combining the in situ reflectivity and transmission electron microscopy (TEM) measurements, it is suggested that the lateral growth at the transition of growth mode is favourable for bending of dislocation lines, thus reducing the density of threading dislocations in the epilayer.
Key words ：
81.05.Ea
81.15.Gh
出版日期: 2006-09-01
:
81.05.Ea
(III-V semiconductors)
81.15.Gh
(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
引用本文:
WANG Jian-Feng;ZHANG Bao-Shun;ZHANG Ji-Cai;ZHU Jian-Jun;WANG Yu-Tian;CHEN Jun; LIU Wei;JIANG De-Sheng;YAO Duan-Zheng; YANG Hui. Reduction of Dislocations in GaN Epilayer Grown on Si (111) Substrates using a GaN Intermedial Layer[J]. 中国物理快报, 2006, 23(9): 2591-2594.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2006/V23/I9/2591
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2006, Vol. 23 
