Influence of Positive Bias on Electrical Properties of Undoped Nanocrystalline Diamond Films
WU Nan-Chun1,2 , XIA Yi-Ben1 , TAN Shou-Hong2 , WANG Lin-Jun1 , LIU Jian-Min1 , SU Qing-Feng1
1 School of Materials Science and Engineering, Shanghai University, Shanghai 200072
2 Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050
Influence of Positive Bias on Electrical Properties of Undoped Nanocrystalline Diamond Films
WU Nan-Chun1,2 ;XIA Yi-Ben1 ;TAN Shou-Hong2 ;WANG Lin-Jun1 ;LIU Jian-Min1 ;SU Qing-Feng1
1 School of Materials Science and Engineering, Shanghai University, Shanghai 200072
2 Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050
关键词 ：
81.05.Uw ,
81.15.Gh
Abstract ： By means of electron assisted hot filament chemical vapour deposition technology, nanocrystalline diamond films are deposited on polished n-(100)Si wafer surface at 1kPa gas pressure. The deposited films are characterized with a Raman spectrometer, atomic force microscope, semiconductor characterization system and Hall effect measurement system. The results show that, when bias current is larger than 2A, sheet hole concentration can increase to a value greater than 1013 cm-2 and undoped nanocrystalline diamond films with a p-type semiconducting characteristic form. Heterojunction between n-Si substrate and the nanocrystalline diamond films deposited with 2A and 6A bias current has an evident junction effect. Hole formation mechanisms in the films are discussed.
Key words ：
81.05.Uw
81.15.Gh
出版日期: 2006-09-01
:
81.05.Uw
81.15.Gh
(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
引用本文:
WU Nan-Chun;XIA Yi-Ben;TAN Shou-Hong;WANG Lin-Jun;LIU Jian-Min;SU Qing-Feng. Influence of Positive Bias on Electrical Properties of Undoped Nanocrystalline Diamond Films[J]. 中国物理快报, 2006, 23(9): 2595-2597.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2006/V23/I9/2595
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