Continuous Wave Performance and Tunability of MBE Grown 2.1μm InGaAsSb/AlGaAsSb MQW lasers
ZHANG Yong-Gang, ZHENG Yan-Lan, LIN Chun, LI Ai-Zhen, LIU Sheng
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
Continuous Wave Performance and Tunability of MBE Grown 2.1μm InGaAsSb/AlGaAsSb MQW lasers
ZHANG Yong-Gang;ZHENG Yan-Lan;LIN Chun;LI Ai-Zhen;LIU Sheng
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
关键词 ：
81.05.Ea ,
42.55.Px ,
81.15.Hi
Abstract ： InGaAsSb/AlGaAsSb multi quantum well ridge waveguide lasers at 2.1μm wavelength are fabricated by using molecular beam epitaxy. Continuous wave performance and tunability of the lasers are evaluated in a wide temperature range extend to 80°C. Output power of the laser at 30°C exceeds 30mW/facet at driving current of 0.5A, the characteristic temperature T0 is 89K in 0--50°C range. No fast degradation is observed in accelerated aging test at 90°C for those lasers with lower Al content in cladding layers. Temperature tunability of the lasers is 1.36nm/K. Single-mode output with side mode suppression ratios greater than 20dB is achieved in a certain driving current region; current tunability is 8×10-3 nm/mA regardless of mode hopping.
Key words ：
81.05.Ea
42.55.Px
81.15.Hi
出版日期: 2006-08-01
:
81.05.Ea
(III-V semiconductors)
42.55.Px
(Semiconductor lasers; laser diodes)
81.15.Hi
(Molecular, atomic, ion, and chemical beam epitaxy)
引用本文:
ZHANG Yong-Gang;ZHENG Yan-Lan;LIN Chun;LI Ai-Zhen;LIU Sheng. Continuous Wave Performance and Tunability of MBE Grown 2.1μm InGaAsSb/AlGaAsSb MQW lasers[J]. 中国物理快报, 2006, 23(8): 2262-2265.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2006/V23/I8/2262
[1]
ZHONG Fei;QIU Kai;LI Xin-Hua;YIN Zhi-Jun;XIE Xin-Jian;WANG Yang;JI Chang-Jian;CAO Xian-Cun;HAN Qi-Feng;CHEN Jia-Rong;WANG Yu-Qi. Effect of III/V Ratio of HT-AlN Buffer Layer on Polarity Selection and Electrical Quality of GaN Films Grown by Radio Frequency Molecular Beam Epitaxy
[2]
WANG Jian-Feng;ZHANG Bao-Shun;ZHANG Ji-Cai;ZHU Jian-Jun;WANG Yu-Tian;CHEN Jun; LIU Wei;JIANG De-Sheng;YAO Duan-Zheng; YANG Hui. Reduction of Dislocations in GaN Epilayer Grown on Si (111) Substrates using a GaN Intermedial Layer
[3]
XU Ji-Ying;WANG Jia;GAI Hong-Feng;TIAN Qian;WANG Bo-Xiong;HAO Zhi-Biao;HAN Shuo. Experimental Investigation of an L-Shaped Very-Small-Aperture Laser
[4]
WANG Huan;YAO Shu-De;PAN Yao-Bo;YU Tong-Jun;ZHANG Guo-Yi. Microstructure Study on Heterostructures of AlInGaN/GaN/Al2 O3 by Using Rutherford ackscattering/Channelling and XRD
[5]
CHEN Dong;LIU Wen-Qing;ZHANG Yu-Jun;LIU Jian-Guo;WEI Qing-Nong;KAN Rui-Feng;WANG Min;CUI Yi-Ben;CHEN Jiu-Ying. Modulation Frequency Multiplexed Tunable Diode Laser Spectroscopy System for Simultaneous CO, CO2 Measurements
[6]
MA Hong-Xia;HAN Yan-Jun;SHENTU Wei-Jin;ZHANG Xian-Peng;LUO Yi;. A Novel Ni/Ag/Pt Ohmic Contact to P-Type GaN for Flip-Chip Light-Emitting Diodes
[7]
YU Nai-Sen;GUO Li-Wei;CHEN Hong;XING Zhi-Gang;WANG Jing;ZHU Xue-Liang;PENG Ming-Zeng;YAN Jian-Feng;JIA Hai-Qiang;ZHOU Jun-Ming. Luminescent Characteristics of Near Ultraviolet InGaN/GaN MQWs Grown on Grooved Sapphire Substrates Fabricated by Wet Chemical Etching
[8]
WANG Jian;TIAN Jian-Bai;XIONG Bing;SUN Chang-Zheng;HAO Zhi-Biao;LUO Yi. Deep InP Gratings for Opto-Electronic Devices Etched by Cl2 /CH4 /Ar Inductively Coupled Plasma
[9]
HUANG Kai-Kai;ZHANG Jian-Wei;CHEN Jing-Biao;YANG Dong-Hai. Reduce of the Linewidth of a Diode Laser by Locking to a High-Finesse Fabry--Perot Cavity
[10]
ZHANG Yong-Gang;XU Gang-Yi;LI Ai-Zhen;LI Yao-Yao;GU Yi;LIU Sheng;WEI Lin. Pulse Wavelength Scan of Room-Temperature Mid-Infrared Distributed Feedback Quantum Cascade Lasers for N2 O Gas Detection
[11]
LIU Jun-Qi;LIU Feng-Qi;LI Lu;SHAO Ye;GUO Yu;WANG Zhan-Guo. High-Power and Low-Threshold-Current-Density GaAs/AlGaAs Quantum Cascade Lasers
[12]
CHEN Qin;HUANG Yong-Zhen. WG-Like Modes Selectivity in a Square Cavity with Posts
[13]
XIE Xin-Jian;ZHONG Fei;QIU Kai;LIU Gui-Feng;YIN Zhi-Jun;WANG Yu-Qi;LI Xin-Hua;JI Chang-Jian;HAN Qi-Feng;CHEN Jia-Rong;CAO Xian-Cun. Growth of Strain Free GaN Layers on (0001) Oriented Sapphire by Using Quasi-Porous GaN Template
[14]
CHEN Zhi-Tao;;SU Yue-Yong;;YANG Zhi-Jian;;ZHANG Yan;;ZHANG Bin;;GUO Li-Ping;XU Ke;;PAN Yao-Bao;;ZHANG Han;ZHANG Guo-Yi;. Room-Temperature Ferromagnetism of Ga1-x Mnx N Grown by Low-Pressure Metalorganic Chemical Vapour Deposition
[15]
WU Dong-Hai;NIU Zhi-Chuan;ZHANG Shi-Yong;NI Hai-Qiao;HE Zhen-Hong;ZHAO Huan;PENG Hong-Ling;YANG Xiao-Hong;HAN Qin;WU Rong-Han. Influence of Growth Parameters of Frequency-Radio Plasma Nitrogen Source on Extending Emission Wavelengths from 1.31μm to 1.55μm GaInNAs/GaAs Quantum Wells Grown by Molecular-Beam Epitaxy
2006, Vol. 23 
