High-Power and Low-Threshold-Current-Density GaAs/AlGaAs Quantum Cascade Lasers
LIU Jun-Qi, LIU Feng-Qi, LI Lu, SHAO Ye, GUO Yu, WANG Zhan-Guo
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences,
PO Box 912, Beijing 100083
High-Power and Low-Threshold-Current-Density GaAs/AlGaAs Quantum Cascade Lasers
LIU Jun-Qi;LIU Feng-Qi;LI Lu;SHAO Ye;GUO Yu;WANG Zhan-Guo
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences,
PO Box 912, Beijing 100083
关键词 ：
42.55.Px ,
71.55.Eq ,
81.15.Hi
Abstract ： We report on the realization of GaAs/AlGaAs quantum cascade lasers with an emission wavelength of 9.1μm above the liquid nitrogen temperature. With optimal current injection window and ridge width of 24 and 60μm respectively, a peak output power more than 500mW is achieved in pulsed mode operation. A low threshold current density Jth =2.6kA/cm2 gives the devices good lasing characteristics. In a drive frequency of 1kHz, the laser operates up to 20% duty cycle.
Key words ：
42.55.Px
71.55.Eq
81.15.Hi
出版日期: 2006-07-01
:
42.55.Px
(Semiconductor lasers; laser diodes)
71.55.Eq
(III-V semiconductors)
81.15.Hi
(Molecular, atomic, ion, and chemical beam epitaxy)
引用本文:
LIU Jun-Qi;LIU Feng-Qi;LI Lu;SHAO Ye;GUO Yu;WANG Zhan-Guo. High-Power and Low-Threshold-Current-Density GaAs/AlGaAs Quantum Cascade Lasers[J]. 中国物理快报, 2006, 23(7): 1784-1786.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2006/V23/I7/1784
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2006, Vol. 23 
