High-Duty-Cycle Operation of GaAs/AlGaAs Quantum Cascade Laser above Liquid Nitrogen Temperature
LIU Jun-Qi1 , LIU Feng-Qi1 , SHAO Ye1 , LI Lu1 , GUO Yu1 , WANG Zhan-Guo1 , WANG Liang-Chen2
1 Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
2 Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
High-Duty-Cycle Operation of GaAs/AlGaAs Quantum Cascade Laser above Liquid Nitrogen Temperature
LIU Jun-Qi1 ;LIU Feng-Qi1 ;SHAO Ye1 ;LI Lu1 ;GUO Yu1 ;WANG Zhan-Guo1 ;WANG Liang-Chen2
1 Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
2 Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
关键词 ：
42.55.Px ,
85.60.Bt ,
71.55.Eq ,
81.15.H
Abstract ： We present a detailed study of λ ～ 9.75μm GaAs/AlGaAs quantum cascade lasers. For a coated 2-mm-long and 40-μm-wide laser, an optical power of 85μW is observed at 95% duty cycle at 80K. At a moderate driving pulse (1kHz and 1% duty cycle), the device presents a peak power more than 20mW even at 120K. At 80K, the fitted result of threshold current densities shows evidence of potential cw operation.
Key words ：
42.55.Px
85.60.Bt
71.55.Eq
81.15.H
出版日期: 2006-11-01
:
42.55.Px
(Semiconductor lasers; laser diodes)
85.60.Bt
(Optoelectronic device characterization, design, and modeling)
71.55.Eq
(III-V semiconductors)
81.15.H
引用本文:
LIU Jun-Qi;LIU Feng-Qi;SHAO Ye;LI Lu;GUO Yu;WANG Zhan-Guo;WANG Liang-Chen. High-Duty-Cycle Operation of GaAs/AlGaAs Quantum Cascade Laser above Liquid Nitrogen Temperature[J]. 中国物理快报, 2006, 23(11): 2968-2971.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2006/V23/I11/2968
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2006, Vol. 23 
