Deep InP Gratings for Opto-Electronic Devices Etched by Cl2 /CH4 /Ar Inductively Coupled Plasma
WANG Jian, TIAN Jian-Bai, XIONG Bing, SUN Chang-Zheng, HAO Zhi-Biao, LUO Yi
Department of Electronic Engineering, Tsinghua University, Beijing 100084
Deep InP Gratings for Opto-Electronic Devices Etched by Cl2 /CH4 /Ar Inductively Coupled Plasma
WANG Jian;TIAN Jian-Bai;XIONG Bing;SUN Chang-Zheng;HAO Zhi-Biao;LUO Yi
Department of Electronic Engineering, Tsinghua University, Beijing 100084
关键词 ：
52.77.Bn ,
81.65.Cf ,
42.55.Px
Abstract ： Deep InP gratings are etched by Cl2 /CH4 /Ar inductively coupled plasma (ICP) at room temperature. A comparison is made between SiNx mask patterns formed by wet and dry etching. SF6 reactive ion etching is adopted for smooth and vertical sidewall. The etching conditions of Cl2 /CH4 /Ar ICP are optimized for high anisotropy, and a 1.7-μm-deep InP grating with an aspect ratio of 10:1 is demonstrated. The technique is then used for the fabrication of 1.55-μm laterally coupled distributed feedback AlGaInAs-InP laser.
Key words ：
52.77.Bn
81.65.Cf
42.55.Px
出版日期: 2006-08-01
:
52.77.Bn
(Etching and cleaning)
81.65.Cf
(Surface cleaning, etching, patterning)
42.55.Px
(Semiconductor lasers; laser diodes)
引用本文:
WANG Jian;TIAN Jian-Bai;XIONG Bing;SUN Chang-Zheng;HAO Zhi-Biao;LUO Yi. Deep InP Gratings for Opto-Electronic Devices Etched by Cl2 /CH4 /Ar Inductively Coupled Plasma[J]. 中国物理快报, 2006, 23(8): 2158-2160.
2 /CH4 /Ar Inductively Coupled Plasma. Chin. Phys. Lett., 2006, 23(8): 2158-2160.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2006/V23/I8/2158
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2006, Vol. 23 
