Influence of Growth Parameters of Frequency-Radio Plasma Nitrogen Source on Extending Emission Wavelengths from 1.31μm to 1.55μm GaInNAs/GaAs Quantum Wells Grown by Molecular-Beam Epitaxy
WU Dong-Hai, NIU Zhi-Chuan, ZHANG Shi-Yong, NI Hai-Qiao, HE Zhen-Hong, ZHAO Huan, PENG Hong-Ling, YANG Xiao-Hong, HAN Qin, WU Rong-Han
State Key Laboratory for Superlattices and Microstructures Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
Influence of Growth Parameters of Frequency-Radio Plasma Nitrogen Source on Extending Emission Wavelengths from 1.31μm to 1.55μm GaInNAs/GaAs Quantum Wells Grown by Molecular-Beam Epitaxy
WU Dong-Hai;NIU Zhi-Chuan;ZHANG Shi-Yong;NI Hai-Qiao;HE Zhen-Hong;ZHAO Huan;PENG Hong-Ling;YANG Xiao-Hong;HAN Qin;WU Rong-Han
State Key Laboratory for Superlattices and Microstructures Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
关键词 ：
78.55.Cr ,
81.15.Hi ,
68.35.Dv ,
42.55.Px
Abstract ： High (42.5%) indium content GaInNAs/GaAs quantum wells with room temperature emission wavelength from 1.3μm to 1.5μm range were successfully grown by Radio Frequency Plasma Nitrogen source assisted Molecular Beam Epitaxy. The growth parameters of plasma power and N2 flow rate were optimized systematically to improve the material quality. Photoluminescence and transmission electron microscopy measurements showed that the optical and crystal quality of the 1.54μm GaInNAs/GaAs QWs was kept as comparable as that in 1.31μm.
Key words ：
78.55.Cr
81.15.Hi
68.35.Dv
42.55.Px
出版日期: 2006-04-01
:
78.55.Cr
(III-V semiconductors)
81.15.Hi
(Molecular, atomic, ion, and chemical beam epitaxy)
68.35.Dv
(Composition, segregation; defects and impurities)
42.55.Px
(Semiconductor lasers; laser diodes)
引用本文:
WU Dong-Hai;NIU Zhi-Chuan;ZHANG Shi-Yong;NI Hai-Qiao;HE Zhen-Hong;ZHAO Huan;PENG Hong-Ling;YANG Xiao-Hong;HAN Qin;WU Rong-Han. Influence of Growth Parameters of Frequency-Radio Plasma Nitrogen Source on Extending Emission Wavelengths from 1.31μm to 1.55μm GaInNAs/GaAs Quantum Wells Grown by Molecular-Beam Epitaxy[J]. 中国物理快报, 2006, 23(4): 1005-1008.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2006/V23/I4/1005
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2006, Vol. 23 
