Enhancement of Photoluminescence Intensity of GaInNAs/GaAs Quantum Wells by Two-Step Rapid Thermal Annealing
ZHAO Huan, XU Ying-Qiang, NI Hai-Qiao, HAN Qin, WU Rong-Han, NIU Zhi-Chuan
State Key Laboratory for Superlattice and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
Enhancement of Photoluminescence Intensity of GaInNAs/GaAs Quantum Wells by Two-Step Rapid Thermal Annealing
ZHAO Huan;XU Ying-Qiang;NI Hai-Qiao;HAN Qin;WU Rong-Han;NIU Zhi-Chuan
State Key Laboratory for Superlattice and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
关键词 ：
78.67.De ,
78.55.Cr ,
61.72.Cc
Abstract ： We investigate the effect of rapid thermal annealing on InGaNAs/GaAs quantum wells. At optimized annealing temperatures and times, the greatest enhancement of the photoluminescence intensity is obtained by a special two-step annealing process. To identify the mechanism affecting the material quality during the rapid thermal annealing, differential temperature analysis is applied, and temperature- and power-dependent photoluminescence is carried out on the samples annealed under different conditions. Our experiment reveals that some composition redistribution or other related ordering processes may occur in the quantum-well layer during annealing. Annealing at a lower temperature for a long time primarily can remove defects and dislocations while annealing at a higher temperature for a short time primarily homogenizes the composition in the quantum wells.
Key words ：
78.67.De
78.55.Cr
61.72.Cc
出版日期: 2006-09-01
引用本文:
ZHAO Huan;XU Ying-Qiang;NI Hai-Qiao;HAN Qin;WU Rong-Han;NIU Zhi-Chuan. Enhancement of Photoluminescence Intensity of GaInNAs/GaAs Quantum Wells by Two-Step Rapid Thermal Annealing[J]. 中国物理快报, 2006, 23(9): 2579-2582.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2006/V23/I9/2579
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2006, Vol. 23 
