Optical Properties of Phase-Separated GaN1-xPx Alloys Grown by Light-Radiation Heating Metal-Organic Chemical Vapour Deposition
LU Li-Wu, CHEN Ting-Jie, SHEN Bo, WANG Jiang-Nong, GE Wei-Kun
1Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
2Department of Physics, The Hong Kong University of Science and Technology, Kowloon, Hong Kong
3National Laboratory of Solid State Microstructure and Department of Physics, Nanjing University, Nanjing 210093
Optical Properties of Phase-Separated GaN1-xPx Alloys Grown by Light-Radiation Heating Metal-Organic Chemical Vapour Deposition
LU Li-Wu;CHEN Ting-Jie;SHEN Bo;WANG Jiang-Nong;GE Wei-Kun
1Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
2Department of Physics, The Hong Kong University of Science and Technology, Kowloon, Hong Kong
3National Laboratory of Solid State Microstructure and Department of Physics, Nanjing University, Nanjing 210093
Abstract： Based on the results of the temperature-dependent photoluminescence (PL) measurements, the broad PL emission in the phase-separated GaNP alloys with P compositions of 0.03, 0.07, and 0.15 has investigated. The broad PL peaks at 2.18, 2.12 and 1.83eV are assigned to be an emission from the optical transitions from several trap levels, possibly the iso-electronic trap levels related to nitrogen. With the increasing P composition (from 0.03 to 0.15), these iso-electronic trap levels are shown to become resonant with the conduction band of the alloy and thus optically inactive, leading to the apparent red shift (80--160meV) of the PL peak energy and the trend of the red shift is strengthened. No PL emission peak is observed from the GaN-rich GaNP region, suggesting that the photogenerated carriers in the GaN-rich GaNP region may recombine with each other via non-radiation transitions.
2005, Vol. 22 
