Tuning of Detection Wavelength in a Resonant-Cavity-Enhanced Quantum-Dot-Embedded Photodiode by Changing Detection Angle
ZHANG Hao, ZHENG Hou-Zhi, XU Ping, PENG Hong-Ling,TAN Ping-Heng, YANG Fu-Hua, NI Hai-Qiao, ZENG Yu-Xin,
GAN Hua-Dong, ZHU Hui
State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
Tuning of Detection Wavelength in a Resonant-Cavity-Enhanced Quantum-Dot-Embedded Photodiode by Changing Detection Angle
ZHANG Hao;ZHENG Hou-Zhi;XU Ping;PENG Hong-Ling,TAN Ping-Heng;YANG Fu-Hua;NI Hai-Qiao;ZENG Yu-Xin,
GAN Hua-Dong;ZHU Hui
State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
关键词 ：
42.50.Ct ,
36.+c ,
78.66.Fd
Abstract ： We have fabricated a resonant-cavity-enhanced photodiode (RCE-PD) with InGaAs quantum dots (QDs) as an active medium. This sort of QD-embedded RCE-PD is capable of a peak external quantum efficiency of 32% and responsivity of 0.27A/W at 1.058μm with a full width at half maximum (FWHM) of 5nm. Angle-resolved photocurrent response eventually proves that with the detection angle changing from 0°to 60°, the peak-current wavelength shifts towards the short wavelength side by 37nm, while the quantum efficiency remains larger than 15%.
Key words ：
42.50.Ct
36.+c
78.66.Fd
出版日期: 2005-06-01
:
42.50.Ct
(Quantum description of interaction of light and matter; related experiments)
71
(Electronic structure of bulk materials )
36.+c
78.66.Fd
(III-V semiconductors)
引用本文:
ZHANG Hao;ZHENG Hou-Zhi;XU Ping;PENG Hong-Ling;TAN Ping-Heng;YANG Fu-Hua;NI Hai-Qiao;ZENG Yu-Xin;
GAN Hua-Dong;ZHU Hui. Tuning of Detection Wavelength in a Resonant-Cavity-Enhanced Quantum-Dot-Embedded Photodiode by Changing Detection Angle[J]. 中国物理快报, 2005, 22(6): 1405-1408.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2005/V22/I6/1405
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2005, Vol. 22 
