Intraband Relaxation and Its Influences on Quantum Dot Lasers
DENG Sheng-Ling, HUANG Yong-Zhen, YU Li-Juan
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
Intraband Relaxation and Its Influences on Quantum Dot Lasers
DENG Sheng-Ling;HUANG Yong-Zhen;YU Li-Juan
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
关键词 ：
78.20.-e ,
78.20.Bh ,
42.55.Px
Abstract ： A comprehensive two-level numerical model is developed to describe carrier distribution in a quantum-dot laser. Light-emission spectra with different intraband relaxation rates (2ps, 7.5ps and 20ps) are calculated and analysed to investigate the influence of relaxation rates on performance of the quantum-dot laser. The results indicate that fast intraband relaxation favours not only the ground state single mode operation but also the higher injection efficiency.
Key words ：
78.20.-e
78.20.Bh
42.55.Px
出版日期: 2005-08-01
:
78.20.-e
(Optical properties of bulk materials and thin films)
78.20.Bh
(Theory, models, and numerical simulation)
42.55.Px
(Semiconductor lasers; laser diodes)
引用本文:
DENG Sheng-Ling;HUANG Yong-Zhen;YU Li-Juan. Intraband Relaxation and Its Influences on Quantum Dot Lasers[J]. 中国物理快报, 2005, 22(8): 2077-2080.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2005/V22/I8/2077
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