Efficient Exciton Transfer from In0.35Ga0.65As Template into InAs Quantum Dots Grown on GaAs (311)B Substrates
WANG Fang-Zhen1, CHEN Zhang-Hai1, GONG Qian2, R. Nötzel3, BAI Li-Hui1, SHEN Xue-Chu1
1Surface Physics Laboratory, Department of Physics, Fudan University, Shanghai 200433
2Institute of Microsystem and Information Technology Chinese Academy of Sciences, Shanghai 200050
3COBRA Inter-University Research Institute, Eindhoven University of Technology, 5600 MB Eindhoven, Netherlands
Efficient Exciton Transfer from In0.35Ga0.65As Template into InAs Quantum Dots Grown on GaAs (311)B Substrates
WANG Fang-Zhen1;CHEN Zhang-Hai1;GONG Qian2;R. Nötzel3;BAI Li-Hui1;SHEN Xue-Chu1
1Surface Physics Laboratory, Department of Physics, Fudan University, Shanghai 200433
2Institute of Microsystem and Information Technology Chinese Academy of Sciences, Shanghai 200050
3COBRA Inter-University Research Institute, Eindhoven University of Technology, 5600 MB Eindhoven, Netherlands
Abstract： Atomic force microscopy (AFM) and power-dependent micro-photoluminescence (μ-PL) spectroscopy are used to study the structure and exciton energy states in InAs quantum dots (QDs) grown on an In0.35Ga0.65As template on GaAs (311)B. The In0.35Ga0.65As template, consisting of a two-dimensionally modulated layer of closely packed connected cells, has a remarkable effect on the optical properties of the InAs QDs. By comparing the emission spectra of the samples without and with InAs QDs and the work carried out by Gong et al. [J. Cryst. Growth 251 (2003) 150; Appl. Phys. Lett. 81 (2002) 3254] we conclude that the existence of the In0.35Ga0.65As template enhances the photo-absorption and therefore the exciton emission from the QDs due to efficient exciton transfer from the template into the QDs. Furthermore, the PL emission from the QDs clearly reveals four discrete energy levels, S, P, D, and F with increasing excitation power.
WANG Fang-Zhen;CHEN Zhang-Hai;GONG Qian;R. Nötzel;BAI Li-Hui;SHEN Xue-Chu. Efficient Exciton Transfer from In0.35Ga0.65As Template into InAs Quantum Dots Grown on GaAs (311)B Substrates[J]. 中国物理快报, 2006, 23(5): 1310-1313.
WANG Fang-Zhen, CHEN Zhang-Hai, GONG Qian, R. Nö, tzel, BAI Li-Hui, SHEN Xue-Chu. Efficient Exciton Transfer from In0.35Ga0.65As Template into InAs Quantum Dots Grown on GaAs (311)B Substrates. Chin. Phys. Lett., 2006, 23(5): 1310-1313.
2006, Vol. 23 
