Interband Optical Transitions due to Donor Bound Excitons in Wurtzite InGaN Strained Coupled Quantum Dots: Strong Built-in Electric Field Effects
CHI Yue-Meng, SHI Jun-Jie
State Key Laboratory for Mesoscopic Physics, and School of Physics, Peking University, Beijing 100871
Interband Optical Transitions due to Donor Bound Excitons in Wurtzite InGaN Strained Coupled Quantum Dots: Strong Built-in Electric Field Effects
CHI Yue-Meng;SHI Jun-Jie
State Key Laboratory for Mesoscopic Physics, and School of Physics, Peking University, Beijing 100871
关键词 :
73.21.La ,
71.35.-y ,
77.65.Ly ,
77.84.Bw
Abstract : Considering the three-dimensional confinement of the electrons and holes and the strong built-in electric field (BEF) in the wurtzite InGaN strained coupled quantum dots (QDs), the positively charged donor bound exciton states and interband optical transitions are investigated theoretically by means of a variational method. Our calculations indicate that the emission wavelengths sensitively depend on the donor position, the strong BEF, and the structure parameters of the QD system.
Key words :
73.21.La
71.35.-y
77.65.Ly
77.84.Bw
出版日期: 2006-08-01
:
73.21.La
(Quantum dots)
71.35.-y
(Excitons and related phenomena)
77.65.Ly
(Strain-induced piezoelectric fields)
77.84.Bw
(Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.)
引用本文:
CHI Yue-Meng;SHI Jun-Jie. Interband Optical Transitions due to Donor Bound Excitons in Wurtzite InGaN Strained Coupled Quantum Dots: Strong Built-in Electric Field Effects[J]. 中国物理快报, 2006, 23(8): 2206-2209.
CHI Yue-Meng, SHI Jun-Jie. Interband Optical Transitions due to Donor Bound Excitons in Wurtzite InGaN Strained Coupled Quantum Dots: Strong Built-in Electric Field Effects. Chin. Phys. Lett., 2006, 23(8): 2206-2209.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2006/V23/I8/2206
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