Abstract： We investigate the ground-state properties of a two-dimensional two-electron quantum dot with a Gaussian confining potential under the influence of perpendicular homogeneous magnetic field. Calculations are carried out by using the method of numerical diagonalization of Hamiltonian matrix within the effective-mass approximation. A ground-state behaviour (singlet→triplet state transitions) as a function of the strength of a magnetic field has been found. It is found that the dot radius R of the Gaussian potential is important for the ground-state transition and the feature of ground-state for the Gaussian potential quantum dot (QD), and the parabolic potential QDs are similar when R is larger. The larger the quantum dot radius, the smaller the magnetic field for the singlet-triplet transition of the ground-state of two interacting electrons in the Gaussian quantum dot.
(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
引用本文:
XIE Wen-Fang. Ground State of a Two-Electron Quantum Dot with a Gaussian Confining Potential[J]. 中国物理快报, 2006, 23(1): 193-195.
XIE Wen-Fang. Ground State of a Two-Electron Quantum Dot with a Gaussian Confining Potential. Chin. Phys. Lett., 2006, 23(1): 193-195.
2006, Vol. 23 
