Step-by-Step Laser Crystallization of Amorphous Si:H/SiNx :H Multilayer for Active Layer in Microcavities
QIAN Bo, CHEN San, CEN Zhan-Hong, CHEN Kun-Ji, LIU Yan-Song, XU Jun, MA Zhong-Yuan, LI Wei, HUANG Xin-Fan
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093
Step-by-Step Laser Crystallization of Amorphous Si:H/SiNx :H Multilayer for Active Layer in Microcavities
QIAN Bo;CHEN San;CEN Zhan-Hong;CHEN Kun-Ji;LIU Yan-Song;XU Jun;MA Zhong-Yuan;LI Wei;HUANG Xin-Fan
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093
关键词 ：
78.55.-m ,
78.67.Hc ,
79.20.Ds ,
42.55.Sa
Abstract ： We report the crystallization and photoluminescence (PL) properties of amorphous Si:H/SiNx :H multilayer (ML) films treated by step-by-step laser annealing. The results of Raman measurements show that the nanocrystalline Si (nc-Si) grains are formed in the a-Si:H layers under the constrained growth mechanism. The blue shift of PL peak with grain size is observed and can be attributed to the quantum confinement effect. For comparison, we also report the crystallization and PL of a-Si:H/SiNx :H ML samples by normal one-step treatment. This method of step-by-step laser treatment will be a candidate to make nc-Si quantum dots in amorphous Si:H/SiNx :H ML as an active layer in microcavities.
Key words ：
78.55.-m
78.67.Hc
79.20.Ds
42.55.Sa
出版日期: 2006-05-01
:
78.55.-m
(Photoluminescence, properties and materials)
78.67.Hc
(Quantum dots)
79.20.Ds
(Laser-beam impact phenomena)
42.55.Sa
(Microcavity and microdisk lasers)
引用本文:
QIAN Bo;CHEN San;CEN Zhan-Hong;CHEN Kun-Ji;LIU Yan-Song;XU Jun;MA Zhong-Yuan;LI Wei;HUANG Xin-Fan. Step-by-Step Laser Crystallization of Amorphous Si:H/SiNx :H Multilayer for Active Layer in Microcavities[J]. 中国物理快报, 2006, 23(5): 1302-1305.
x :H Multilayer for Active Layer in Microcavities. Chin. Phys. Lett., 2006, 23(5): 1302-1305.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2006/V23/I5/1302
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2006, Vol. 23 
