Electrical and Optical Properties of Bulk ZnO Single Crystal Grown by Flux Bridgman Method
LI Xin-Hua1,2 , XU Jia-Yue1 , JIN Min1,2 , SHEN Hui1,2 , LI Xiao-Min1
¹Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050
²Graduate School of the Chinese Academy of Sciences, Beijing 100049
Electrical and Optical Properties of Bulk ZnO Single Crystal Grown by Flux Bridgman Method
LI Xin-Hua1,2 ;XU Jia-Yue1 ;JIN Min1,2 ;SHEN Hui1,2 ;LI Xiao-Min1
¹Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050
²Graduate School of the Chinese Academy of Sciences, Beijing 100049
关键词 ：
77.84.Bw ,
78.55.-m ,
81.05.Dz ,
81.10.Dn
Abstract ： Zinc oxide (ZnO) single crystals are grown by the modified vertical Bridgman method using a PbF₂ flux. The maximum size of the as-grown ZnO crystal is about Ф25 mm×5 mm. The transmittance of the as-grown ZnO crystal is more than 70% in the range of 600--800 nm and the optical band gap is estimated to be 3.21 eV. The photoluminescence spectrum indicates that the as-grown ZnO crystal has a very low concentration of native defects and is much closed to its stoichiometry. The electrical measurement exhibits that the ZnO crystal has low electrical resistivity of 0.02394Ωcm-1 and a high carrier concentration of 2.10×1018 cm-3 .
Key words ：
77.84.Bw
78.55.-m
81.05.Dz
81.10.Dn
出版日期: 2006-12-01
:
77.84.Bw
(Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.)
78.55.-m
(Photoluminescence, properties and materials)
81.05.Dz
(II-VI semiconductors)
81.10.Dn
(Growth from solutions)
引用本文:
LI Xin-Hua;XU Jia-Yue;JIN Min;SHEN Hui;LI Xiao-Min. Electrical and Optical Properties of Bulk ZnO Single Crystal Grown by Flux Bridgman Method[J]. 中国物理快报, 2006, 23(12): 3356-3358.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2006/V23/I12/3356
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