Electroluminescence of an n-ZnO/p-GaN Heterojunction under Forward and Reverse Biases
QIN Qi, GUO Li-Wei, ZHOU Zhong-Tang, CHEN Hong, DU Xiao-Long, MEI Zeng-Xia, JIA Jin-Feng, XUE Qi-Kun, ZHOU Jun-Ming
State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080
Electroluminescence of an n-ZnO/p-GaN Heterojunction under Forward and Reverse Biases
QIN Qi;GUO Li-Wei;ZHOU Zhong-Tang;CHEN Hong;DU Xiao-Long;MEI Zeng-Xia;JIA Jin-Feng;XUE Qi-Kun;ZHOU Jun-Ming
State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080
关键词 ：
42.72.Bj ,
78.30.Fs ,
78.55.-m ,
78.60.Fi
Abstract ： Electroluminescent characteristics of n-ZnO/p-GaN heterojunctions under forward and reverse biases are studied. Emissions at 389nm and 570nm are observed under forward bias. An unusual emission at 390nm appears under reverse bias, and is attributed to the recombination in the p-GaN side of the heterojunction. The yellow emission peaked at 570nm is suppressed under reverse bias. The light intensity exponentially depends on the reverse current. The emission under reverse bias is correlated to tunnelling carrier transport in the heterostructure. Our results also support that the well-known yellow band of GaN comes from the transitions between some near-conduction-band-edge states and deep localized acceptor states.
Key words ：
42.72.Bj
78.30.Fs
78.55.-m
78.60.Fi
出版日期: 2005-09-01
:
42.72.Bj
(Visible and ultraviolet sources)
78.30.Fs
(III-V and II-VI semiconductors)
78.55.-m
(Photoluminescence, properties and materials)
78.60.Fi
(Electroluminescence)
引用本文:
QIN Qi;GUO Li-Wei;ZHOU Zhong-Tang;CHEN Hong;DU Xiao-Long;MEI Zeng-Xia;JIA Jin-Feng;XUE Qi-Kun;ZHOU Jun-Ming. Electroluminescence of an n-ZnO/p-GaN Heterojunction under Forward and Reverse Biases[J]. 中国物理快报, 2005, 22(9): 2298-2301.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2005/V22/I9/2298
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2005, Vol. 22 
