Electroluminescence Afterglow from Indium Tin Oxide/Si-Rich SiO2 /p-Si Structure
WANG Xiao-Xin, ZHANG Jian-Guo, CHENG Bu-Wen, YU Jin-Zhong, WANG Qi-Ming
State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences,
Beijing 100083
Electroluminescence Afterglow from Indium Tin Oxide/Si-Rich SiO2 /p-Si Structure
WANG Xiao-Xin;ZHANG Jian-Guo;CHENG Bu-Wen;YU Jin-Zhong;WANG Qi-Ming
State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences,
Beijing 100083
关键词 ：
78.60.Fi ,
73.61.Jc ,
78.67.-n
Abstract ： Indium tin oxide/Si-rich SiO2 /p-Si structured devices are fabricated to study the electroluminescence (EL) of the Si-rich SiO2 (SRO) material. The obvious peaks at ～1050nm and ～1260nm in the EL are ascribed to localized state transitions of amorphous Si (α-Si) clusters. The EL afterglow associated with α-Si clusters is observed from this structure at room temperature, while the afterglow is absent in the case of optical pumping. It is believed that carrier-induced defects act as trap centres in the α-Si clusters, resulting in the EL afterglow. The phenomenon of the EL afterglow indicates the limits of EL performance and electrical modulation of the SRO material with a larger fraction of α-Si clusters.
Key words ：
78.60.Fi
73.61.Jc
78.67.-n
出版日期: 2006-05-01
:
78.60.Fi
(Electroluminescence)
73.61.Jc
(Amorphous semiconductors; glasses)
78.67.-n
(Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures)
引用本文:
WANG Xiao-Xin;ZHANG Jian-Guo;CHENG Bu-Wen;YU Jin-Zhong;WANG Qi-Ming. Electroluminescence Afterglow from Indium Tin Oxide/Si-Rich SiO2 /p-Si Structure[J]. 中国物理快报, 2006, 23(5): 1306-1309.
2 /p-Si Structure. Chin. Phys. Lett., 2006, 23(5): 1306-1309.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2006/V23/I5/1306
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2006, Vol. 23 
