Nonlinear Shift of the Raman A1 Mode in Ga-Incorporated CuInSe2 Thin Films
XU Chuan-Ming1 , SUN Yun1 , LI Feng-Yan1 , ZHANG Li1 , XUE Yu-Ming1 , HE Qing1 , LIU Hong-Tu2
1 Institute of Photoelectronics, Nankai University, Tianjin 300071
2 Department of Physics, University of Science and Technology of China, Hefei 230026
Nonlinear Shift of the Raman A1 Mode in Ga-Incorporated CuInSe2 Thin Films
XU Chuan-Ming1 ;SUN Yun1 ;LI Feng-Yan1 ;ZHANG Li1 ;XUE Yu-Ming1 ;HE Qing1 ;LIU Hong-Tu2
1 Institute of Photoelectronics, Nankai University, Tianjin 300071
2 Department of Physics, University of Science and Technology of China, Hefei 230026
关键词 ：
78.30.Fs ,
68.55.Nq ,
81.15.Kk ,
61.66.Fn
Abstract ： Composition dependence of quaternary CuIn1-x Gax Se2 films on Ga content has been systematically investigated by Raman scattering. The dominant A1 mode shifts from 174cm-1 for CuInSe2 to 185cm-1 for CuGaSe2 in an approximately polynomial curve other than a linear curve, indicating existence of asymmetric distribution of Ga and In on a microscopic scale in films. With Ga content x>0.3, the significantly broadening and intensity decrease of A1 modes suggest the degradation of crystalline quality of chalcopyrite phase. Additionally, the quenching of additional Raman band at 183cm-1 for the Ga-rich films reveals that CuAu-ordered phase can coexist in nominal chalcopyrite CuInSe2 films but not in CuGaSe2 , due to Ga inhibition effect.
Key words ：
78.30.Fs
68.55.Nq
81.15.Kk
61.66.Fn
出版日期: 2006-04-01
:
78.30.Fs
(III-V and II-VI semiconductors)
68.55.Nq
(Composition and phase identification)
81.15.Kk
(Vapor phase epitaxy; growth from vapor phase)
61.66.Fn
(Inorganic compounds)
引用本文:
XU Chuan-Ming;SUN Yun;LI Feng-Yan;ZHANG Li;XUE Yu-Ming;HE Qing;LIU Hong-Tu. Nonlinear Shift of the Raman A1 Mode in Ga-Incorporated CuInSe2 Thin Films[J]. 中国物理快报, 2006, 23(4): 1002-1004.
1 Mode in Ga-Incorporated CuInSe2 Thin Films. Chin. Phys. Lett., 2006, 23(4): 1002-1004.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2006/V23/I4/1002
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