Photoluminescence from Electron-Beam Deposited CeO2 Thin Film after High Temperature Thermal Annealing
FANG Ying-Cui1,2, ZHANG Zhuang-Jian3, SHEN Jie3, LU Ming4
1School of Vacuum Section of Mechanical and Automotive Engineering, Hefei University of Technology, Hefei 230009
2Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026
3Department of Materials Science, Fudan University, Shanghai 200433
Department of Optical Science and Engineering, and the State Key Laboratory of Advanced Photonic Materials and Devices, Fudan University, Shanghai 200433
Photoluminescence from Electron-Beam Deposited CeO2 Thin Film after High Temperature Thermal Annealing
1School of Vacuum Section of Mechanical and Automotive Engineering, Hefei University of Technology, Hefei 230009
2Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026
3Department of Materials Science, Fudan University, Shanghai 200433
Department of Optical Science and Engineering, and the State Key Laboratory of Advanced Photonic Materials and Devices, Fudan University, Shanghai 200433
Abstract： CeOx films are deposited onto the surface of a SiO2 matrix embedded with Si nanocrystals (nc-Si/SiO2) by electron-beam evaporation of CeO2 powder in high vacuum. By tuning the thickness of the CeOx film, photoluminescence (PL) spectra centred at 330, 358, 378, 388, 400, and 450nm, respectively, are observed. It has been identified that the PL centred at 358, 388 and 400nm are from cerium silicide compounds, and those centred at 330nm, 378nm are due to Ce3 ions, while the 450nm PL is from the defects in the SiO2 matrix.
FANG Ying-Cui;ZHANG Zhuang-Jian;SHEN Jie;LU Ming. Photoluminescence from Electron-Beam Deposited CeO2 Thin Film after High Temperature Thermal Annealing[J]. 中国物理快报, 2006, 23(7): 1919-1922.
FANG Ying-Cui, ZHANG Zhuang-Jian, SHEN Jie, LU Ming. Photoluminescence from Electron-Beam Deposited CeO2 Thin Film after High Temperature Thermal Annealing. Chin. Phys. Lett., 2006, 23(7): 1919-1922.
2006, Vol. 23 
