A Passive Q-Switched Microchip Er/Yb Glass Laser Pumped by Laser Diode
SONG Feng1,2, WU Zhao-Hui1,2, LIU Shu-Jing1,2, CAI Hong1,2, TIAN Jian-Guo1,2, ZHANG Guang-Yin1,2, Boris Denker3, Sergei Sverchkov3
1Photonics Center, Nankai University, Tianjin 300071
2Key Laboratory of Advanced Technique and Fabrication for Weak-Light Nonlinear Photonics Materials (Ministry of Education), Nankai University, Tianjin 300457
3General Physics Institute (GPI), Russian Academy of Sciences
A Passive Q-Switched Microchip Er/Yb Glass Laser Pumped by Laser Diode
SONG Feng1,2;WU Zhao-Hui1,2;LIU Shu-Jing1,2;CAI Hong1,2;TIAN Jian-Guo1,2;ZHANG Guang-Yin1,2;Boris Denker3;Sergei Sverchkov3
1Photonics Center, Nankai University, Tianjin 300071
2Key Laboratory of Advanced Technique and Fabrication for Weak-Light Nonlinear Photonics Materials (Ministry of Education), Nankai University, Tianjin 300457
3General Physics Institute (GPI), Russian Academy of Sciences
Abstract： A laser-diode-pumped 1.54-μm passive Q-switched erbium doped glass laser was reported. We utilize a laser diode with wavelength of 973nm to pump a 1-mm Er/Yb co-doped phosphate glass with the erbium and ytterbium concentrations of 1wt.% and 21wt.%, respectively. A Co2+:MgAl2O4 slab crystal was used as a passive Q-switcher. Q-switched pulses with repetition frequency of 800Hz, width of 7.4ns, peak power of 2.2kW and average power of 13.3mW were obtained when absorbed pump power was 475mW. A sandwich structure of the Q-switched microchip Er/Yb glass laser was demonstrated, which shows shorter pulse width of 6.8ns. Dependences of pulse duration and repetition frequency on pump power were also investigated.
2006, Vol. 23 
