Incorporation Behaviour of Arsenic and Phosphorus in GaAsP/GaAs Grown by Solid Source Molecular Beam Epitaxy with a GaP Decomposition Source
WU Shu-Dong, GUO Li-Wei, WANG Wen-Xin, LI Zhi-Hua, NIU Ping-Juan, HUANG Qi, ZHOU Jun-Ming
Institute of Physics, Chinese Academy of Sciences, Beijing 100080
Incorporation Behaviour of Arsenic and Phosphorus in GaAsP/GaAs Grown by Solid Source Molecular Beam Epitaxy with a GaP Decomposition Source
WU Shu-Dong;GUO Li-Wei;WANG Wen-Xin;LI Zhi-Hua;NIU Ping-Juan;HUANG Qi;ZHOU Jun-Ming
Institute of Physics, Chinese Academy of Sciences, Beijing 100080
关键词 ：
78.55.Cr ,
68.55.Eg ,
73.60.Br
Abstract ： The incorporation behaviour of arsenic and phosphorus in the GaAsP ternary alloy under phosphorus-rich conditions is studied based on the incorporation coefficient model and the growth diffusion model combined with the alloy composition data obtained by high resolution x-ray diffraction analysis. It is found that As adatoms have longer surface lifetime and longer migration length than those of P adatoms, which leads to an arsenic incorporation efficiency much higher than that of phosphorous. With the increase of arsenic flux, the surface lifetime of arsenic adatoms decreases due to the competition of As adatoms. The detailed analysis and discussion are given here.
Key words ：
78.55.Cr
68.55.Eg
73.60.Br
出版日期: 2005-04-01
引用本文:
WU Shu-Dong;GUO Li-Wei;WANG Wen-Xin;LI Zhi-Hua;NIU Ping-Juan;HUANG Qi;ZHOU Jun-Ming. Incorporation Behaviour of Arsenic and Phosphorus in GaAsP/GaAs Grown by Solid Source Molecular Beam Epitaxy with a GaP Decomposition Source[J]. 中国物理快报, 2005, 22(4): 960-962.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2005/V22/I4/960
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2005, Vol. 22 
