Optical Properties of Highly Strained GaInAs/GaAs Quantum Wells Grown by Sb Assistance
QU Yu-Hua, JIANG De-Sheng, WU Dong-Hai, NIU Zhi-Chuan, SUN Zheng
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
Optical Properties of Highly Strained GaInAs/GaAs Quantum Wells Grown by Sb Assistance
QU Yu-Hua;JIANG De-Sheng;WU Dong-Hai;NIU Zhi-Chuan;SUN Zheng
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
关键词 ：
78.55.-m ,
78.67.De ,
82.70.Uv
Abstract ： Optical properties of highly strained GaInAs/GaAs quantum wells (QWs) grown by molecular beam epitaxy with Sb assistance are investigated. The samples grown by Sb incorporation and Sb pre-deposition methods display high room-temperature photoluminescence (PL) intensity at extended long wavelength. This result is explained by the surfactant effects of Sb during the growth of GaInAs/GaAs QW systems. An abnormal S-shaped temperature dependence of the PL peak position is found in the In0.42 Ga0.58 As/GaAs triple QWs sample grown with Sb pre-deposition. By investigating the transmission electron microscope images and time-resolved PL spectra, it is found that the S-shaped temperature dependence of the PL peak position originates from the exciton localization effect brought by the Sb-rich clusters on the QW interface.
Key words ：
78.55.-m
78.67.De
82.70.Uv
出版日期: 2005-08-01
:
78.55.-m
(Photoluminescence, properties and materials)
78.67.De
(Quantum wells)
82.70.Uv
(Surfactants, micellar solutions, vesicles, lamellae, amphiphilic systems, (hydrophilic and hydrophobic interactions))
引用本文:
QU Yu-Hua;JIANG De-Sheng;WU Dong-Hai;NIU Zhi-Chuan;SUN Zheng. Optical Properties of Highly Strained GaInAs/GaAs Quantum Wells Grown by Sb Assistance[J]. 中国物理快报, 2005, 22(8): 2088-2091.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2005/V22/I8/2088
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2005, Vol. 22 
