中国物理快报  2006, Vol. 23 Issue (1): 256-258    
  Original Articles 本期目录 | 过刊浏览 | 高级检索 |
Effect of Al Doping in the InGaN/GaN Multiple Quantum Well Light Emitting Diodes Grown by Metalorganic Chemical Vapour Deposition
LU Yu, YANG Zhi-Jian, PAN Yao-Bo, XU Ke, HU Xiao-Dong, ZHANG Bei, ZHANG Guo-Yi
School of Physics and State Key Laboratory for Mesoscopic Physics, Research Center for Wide Gap Semiconductor, Peking University 100871
Effect of Al Doping in the InGaN/GaN Multiple Quantum Well Light Emitting Diodes Grown by Metalorganic Chemical Vapour Deposition
LU Yu;YANG Zhi-Jian;PAN Yao-Bo;XU Ke;HU Xiao-Dong;ZHANG Bei;ZHANG Guo-Yi
School of Physics and State Key Laboratory for Mesoscopic Physics, Research Center for Wide Gap Semiconductor, Peking University 100871