Flip-Chip GaN-Based Light-Emitting Diodes with Mesh-Contact Electrodes
ZHU Yan-Xu, XU Chen, HAN Jun, SHEN Guang-Di
Beijing Optoelectronic Technology Laboratory, Institute of Electronic Engineering and Information, Beijing University of Technology, Beijing 100022
Flip-Chip GaN-Based Light-Emitting Diodes with Mesh-Contact Electrodes
ZHU Yan-Xu;XU Chen;HAN Jun;SHEN Guang-Di
Beijing Optoelectronic Technology Laboratory, Institute of Electronic Engineering and Information, Beijing University of Technology, Beijing 100022
关键词 :
85.60.Jb ,
77.88.Bw ,
73.61.Ey
Abstract : GaN-based light-emitting diodes (LEDs) with mesh-contact electrodes have been developed. The p-type ohmic contact layer is composed of oxidized Ni/Au mesh and NiO overlay (20Å). An Ag (3000Å) omni-directional reflector covers the p-type contact. The n-type contact is a Ti/Al planar film with a 10-μm-width Ti/Al stripe. The Ti/Al stripe surrounds the centre of LED mesa. With a 20-mA current injection, the light output power of GaN-based LEDs with mesh-contact electrodes is 23% higher than that of the conventional LEDs.
Key words :
85.60.Jb
77.88.Bw
73.61.Ey
出版日期: 2007-01-01
引用本文:
ZHU Yan-Xu;XU Chen;HAN Jun;SHEN Guang-Di. Flip-Chip GaN-Based Light-Emitting Diodes with Mesh-Contact Electrodes[J]. 中国物理快报, 2007, 24(1): 268-270.
ZHU Yan-Xu, XU Chen, HAN Jun, SHEN Guang-Di. Flip-Chip GaN-Based Light-Emitting Diodes with Mesh-Contact Electrodes. Chin. Phys. Lett., 2007, 24(1): 268-270.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2007/V24/I1/268
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