Resonant Tunnelling Diodes and High Electron Mobility Transistors Integrated on GaAs Substrates
HUANG Ying-Long, MA Long, YANG Fu-Hua, WANG Liang-Chen, ZENG Yi-Ping
National Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
Resonant Tunnelling Diodes and High Electron Mobility Transistors Integrated on GaAs Substrates
HUANG Ying-Long;MA Long;YANG Fu-Hua;WANG Liang-Chen;ZENG Yi-Ping
National Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
关键词 ：
73.40.Kp ,
73.61.Ey
Abstract ： AlGaAs/InGaAs high electron mobility transistors (HEMTs) and AlAs/GaAs resonant tunnelling diodes (RTDs) are integrated on GaAs substrates. Molecular beam epitaxy is used to grow the RTD on the HEMT structure. The current--voltage characteristics of the RTD and HEMT are obtained on a two-inch wafer. At room temperature, the peak-valley current ratio and the peak voltage are about 4.8 and 0.44V, respectively. The HEMT is characterized by a gate length of 1μm, a maximum transconductance of 125mS/mm, and a threshold voltage of -1.0V. The current--voltage characteristics of the series-connected RTDs are presented. The current--voltage curves of the parallel connection of one RTD and one HEMT are also presented.
Key words ：
73.40.Kp
73.61.Ey
出版日期: 2006-03-01
:
73.40.Kp
(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
73.61.Ey
(III-V semiconductors)
引用本文:
HUANG Ying-Long;MA Long;YANG Fu-Hua;WANG Liang-Chen;ZENG Yi-Ping. Resonant Tunnelling Diodes and High Electron Mobility Transistors Integrated on GaAs Substrates[J]. 中国物理快报, 2006, 23(3): 697-700.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2006/V23/I3/697
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