Effects of Post-Thermal Treatment on Quality of SiC Grown by PVT Method
ZHU Li-Na, CHEN Xiao-Long, YANG Hui, PENG Tong-Hua, NI Dai-Qin, HU Bo-Qing
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, PO Box 603, Beijing 100080
Effects of Post-Thermal Treatment on Quality of SiC Grown by PVT Method
ZHU Li-Na;CHEN Xiao-Long;YANG Hui;PENG Tong-Hua;NI Dai-Qin;HU Bo-Qing
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, PO Box 603, Beijing 100080
关键词 ：
81.10.Bk ,
81.40.z ,
61.72.Cc
Abstract ： We report the effects of post-thermal treatment on the quality of 2-inch 6H-SiC wafer cut from a crystal boule grown by physical vapour transportation method. The full widths at half maximum of x-ray diffraction rocking curves measured on sites across the 2-inch wafer become narrower, indicating the quality improvement after a three-step post-thermal treatment. It is found that the most common defects such as micropipes and inclusions can be significantly reduced after the treatment. Our results show that the post-thermal treatment is an effective route to improve the quality of SiC single crystals.
Key words ：
81.10.Bk
81.40.z
61.72.Cc
出版日期: 2006-08-01
引用本文:
ZHU Li-Na;CHEN Xiao-Long;YANG Hui;PENG Tong-Hua;NI Dai-Qin;HU Bo-Qing. Effects of Post-Thermal Treatment on Quality of SiC Grown by PVT Method[J]. 中国物理快报, 2006, 23(8): 2273-2276.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2006/V23/I8/2273
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