Design and Fabrication of 1.06 μm Resonant-Cavity Enhanced Reflective Modulator with GaInAs/GaAs Quantum Wells
YANG Xiao-Hong1, HAN Qin1, NI Hai-Qiao2, HUANG She-Song2,
DU Yun1, PENG Hong-Ling2, XIONG Yong-Hua2, NIU Zhi-Chuan2,
WU Rong-Han1
¹State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
²State Key Laboratory for Superlattice and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
Design and Fabrication of 1.06 μm Resonant-Cavity Enhanced Reflective Modulator with GaInAs/GaAs Quantum Wells
YANG Xiao-Hong1;HAN Qin1;NI Hai-Qiao2;HUANG She-Song2,
DU Yun1;PENG Hong-Ling2;XIONG Yong-Hua2;NIU Zhi-Chuan2;
WU Rong-Han1
¹State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
²State Key Laboratory for Superlattice and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
Abstract： A resonant-cavity enhanced reflective optical modulator is designed and fabricated, with three groups of three highly strained InGaAs/GaAs quantum wells in the cavity, for low voltage and high contrast ratio operation. The quantum wells are positioned in antinodes of the optical standing wave. The modulator is grown in a single growth step in an molecular beam epitaxy system, using GaAs/AlAs distributed Bragg reflectors as both the top and bottom mirrors. Results show that the reflection device has a modulation extinction of 3 dB at -4.5 V bias.
2006, Vol. 23 
